The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Filem nipis indium oksida (ITO) yang didopkan timah telah disediakan pada kerajang polietilena tereftalat (PET) secara pincang sputtering. Sekiranya tiada bias substrat, filem yang mempunyai kerintangan tinggi 2
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Salinan
Kiyoshi ISHII, Yoshifumi SAITOU, Kengo FURUTANI, Hiroshi SAKUMA, Yoshito IKEDA, "Estimation of Optimum Ion Energy for the Reduction of Resistivity in Bias Sputtering of ITO Thin Films" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 10, pp. 1653-1657, October 2008, doi: 10.1093/ietele/e91-c.10.1653.
Abstract: Tin-doped indium oxide (ITO) thin films were prepared on a polyethylene terephthalate (PET) foil by bias sputtering. In the absence of a substrate bias, films having a high resistivity of 2
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.10.1653/_p
Salinan
@ARTICLE{e91-c_10_1653,
author={Kiyoshi ISHII, Yoshifumi SAITOU, Kengo FURUTANI, Hiroshi SAKUMA, Yoshito IKEDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Estimation of Optimum Ion Energy for the Reduction of Resistivity in Bias Sputtering of ITO Thin Films},
year={2008},
volume={E91-C},
number={10},
pages={1653-1657},
abstract={Tin-doped indium oxide (ITO) thin films were prepared on a polyethylene terephthalate (PET) foil by bias sputtering. In the absence of a substrate bias, films having a high resistivity of 2
keywords={},
doi={10.1093/ietele/e91-c.10.1653},
ISSN={1745-1353},
month={October},}
Salinan
TY - JOUR
TI - Estimation of Optimum Ion Energy for the Reduction of Resistivity in Bias Sputtering of ITO Thin Films
T2 - IEICE TRANSACTIONS on Electronics
SP - 1653
EP - 1657
AU - Kiyoshi ISHII
AU - Yoshifumi SAITOU
AU - Kengo FURUTANI
AU - Hiroshi SAKUMA
AU - Yoshito IKEDA
PY - 2008
DO - 10.1093/ietele/e91-c.10.1653
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2008
AB - Tin-doped indium oxide (ITO) thin films were prepared on a polyethylene terephthalate (PET) foil by bias sputtering. In the absence of a substrate bias, films having a high resistivity of 2
ER -