The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Transistor aruhan statik organik (OSIT) ialah peranti pemacu yang menjanjikan untuk paparan, kerana ia menunjukkan operasi berkelajuan tinggi, berkuasa tinggi dan voltan rendah. Dalam kajian ini, OSIT dengan elektrod get halus bercorak pendedahan pancaran elektron telah dibuat. Kami menyiasat ciri elektrik asas OSIT phthalocyanine kuprum dan dibandingkan dengan keputusan pengiraan yang diperoleh oleh simulator peranti dua dimensi (2D). Keputusan eksperimen menunjukkan bahawa modulasi get bertambah baik dengan mengurangkan jurang elektrod dan nisbah arus hidup/mati bergantung kepada jurang get.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Salinan
Hiroshi YAMAUCHI, Yasuyuki WATANABE, Masaaki IIZUKA, Masakazu NAKAMURA, Kazuhiro KUDO, "Characterization of Organic Static Induction Transistors with Nano-Gap Gate Fabricated by Electron Beam Lithography" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 12, pp. 1852-1855, December 2008, doi: 10.1093/ietele/e91-c.12.1852.
Abstract: Organic static induction transistor (OSIT) is a promising driving device for the displays, since it shows high-speed, high-power and low-voltage operation. In this study, the OSIT with fine gate electrode patterned by electron beam exposure were fabricated. We investigated the basic electrical characteristics of copper phthalocyanine OSIT and compared with the calculation results obtained by two-dimensional (2D) device simulator. The experimental results show that the gate modulation improved by reducing the electrode gap and on/off current ratio depends on the gate gap.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.12.1852/_p
Salinan
@ARTICLE{e91-c_12_1852,
author={Hiroshi YAMAUCHI, Yasuyuki WATANABE, Masaaki IIZUKA, Masakazu NAKAMURA, Kazuhiro KUDO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization of Organic Static Induction Transistors with Nano-Gap Gate Fabricated by Electron Beam Lithography},
year={2008},
volume={E91-C},
number={12},
pages={1852-1855},
abstract={Organic static induction transistor (OSIT) is a promising driving device for the displays, since it shows high-speed, high-power and low-voltage operation. In this study, the OSIT with fine gate electrode patterned by electron beam exposure were fabricated. We investigated the basic electrical characteristics of copper phthalocyanine OSIT and compared with the calculation results obtained by two-dimensional (2D) device simulator. The experimental results show that the gate modulation improved by reducing the electrode gap and on/off current ratio depends on the gate gap.},
keywords={},
doi={10.1093/ietele/e91-c.12.1852},
ISSN={1745-1353},
month={December},}
Salinan
TY - JOUR
TI - Characterization of Organic Static Induction Transistors with Nano-Gap Gate Fabricated by Electron Beam Lithography
T2 - IEICE TRANSACTIONS on Electronics
SP - 1852
EP - 1855
AU - Hiroshi YAMAUCHI
AU - Yasuyuki WATANABE
AU - Masaaki IIZUKA
AU - Masakazu NAKAMURA
AU - Kazuhiro KUDO
PY - 2008
DO - 10.1093/ietele/e91-c.12.1852
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2008
AB - Organic static induction transistor (OSIT) is a promising driving device for the displays, since it shows high-speed, high-power and low-voltage operation. In this study, the OSIT with fine gate electrode patterned by electron beam exposure were fabricated. We investigated the basic electrical characteristics of copper phthalocyanine OSIT and compared with the calculation results obtained by two-dimensional (2D) device simulator. The experimental results show that the gate modulation improved by reducing the electrode gap and on/off current ratio depends on the gate gap.
ER -