The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Penyepaduan heterogen GaAs HEMTs pada substrat seramik AlN yang diliputi polimida telah ditunjukkan menggunakan teknik pemasangan diri bendalir (FSA). Kami menggunakan blok peranti nipis untuk FSA, yang mempunyai pelbagai kelebihan. Khususnya, mereka boleh mengurangkan kapasiti sumber saliran Cds daripada HEMT yang dipasang jika substrat mempunyai pemalar dielektrik yang rendah. Ini adalah sejenis teknologi baru semikonduktor-pada-penebat (SOI). Sifat dc dan RF HEMT GaAs pada substrat polimida/AlN telah dikaji dan pengurangan Cds telah disahkan. Teknik ini berjaya digunakan pada suis SPDT, di mana nilai rendah Cds adalah penting untuk pengasingan yang baik.
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Salinan
Koichi MAEZAWA, Ikuo SOGA, Shigeru KISHIMOTO, Takashi MIZUTANI, Kazuhiro AKAMATSU, "A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 1025-1030, July 2008, doi: 10.1093/ietele/e91-c.7.1025.
Abstract: The heterogeneous integration of GaAs HEMTs on a polyimide-covered AlN ceramic substrate was demonstrated using a fluidic self-assembly (FSA) technique. We used thin device blocks for the FSA, which have various advantages. In particular, they can reduce the drain-source capacitance Cds of the assembled HEMTs if the substrate has a low dielectric constant. This is a novel kind of semiconductor-on-insulator (SOI) technology. The dc and RF properties of the GaAs HEMTs on the polyimide/AlN substrate were studied and the reduction of Cds was confirmed. This technique was successfully applied to the SPDT switch, where a low Cds is essential for good isolation.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1025/_p
Salinan
@ARTICLE{e91-c_7_1025,
author={Koichi MAEZAWA, Ikuo SOGA, Shigeru KISHIMOTO, Takashi MIZUTANI, Kazuhiro AKAMATSU, },
journal={IEICE TRANSACTIONS on Electronics},
title={A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch},
year={2008},
volume={E91-C},
number={7},
pages={1025-1030},
abstract={The heterogeneous integration of GaAs HEMTs on a polyimide-covered AlN ceramic substrate was demonstrated using a fluidic self-assembly (FSA) technique. We used thin device blocks for the FSA, which have various advantages. In particular, they can reduce the drain-source capacitance Cds of the assembled HEMTs if the substrate has a low dielectric constant. This is a novel kind of semiconductor-on-insulator (SOI) technology. The dc and RF properties of the GaAs HEMTs on the polyimide/AlN substrate were studied and the reduction of Cds was confirmed. This technique was successfully applied to the SPDT switch, where a low Cds is essential for good isolation.},
keywords={},
doi={10.1093/ietele/e91-c.7.1025},
ISSN={1745-1353},
month={July},}
Salinan
TY - JOUR
TI - A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch
T2 - IEICE TRANSACTIONS on Electronics
SP - 1025
EP - 1030
AU - Koichi MAEZAWA
AU - Ikuo SOGA
AU - Shigeru KISHIMOTO
AU - Takashi MIZUTANI
AU - Kazuhiro AKAMATSU
PY - 2008
DO - 10.1093/ietele/e91-c.7.1025
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - The heterogeneous integration of GaAs HEMTs on a polyimide-covered AlN ceramic substrate was demonstrated using a fluidic self-assembly (FSA) technique. We used thin device blocks for the FSA, which have various advantages. In particular, they can reduce the drain-source capacitance Cds of the assembled HEMTs if the substrate has a low dielectric constant. This is a novel kind of semiconductor-on-insulator (SOI) technology. The dc and RF properties of the GaAs HEMTs on the polyimide/AlN substrate were studied and the reduction of Cds was confirmed. This technique was successfully applied to the SPDT switch, where a low Cds is essential for good isolation.
ER -