The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kami telah membuat HEMT AlGaN/GaN dengan lapisan penutup InGaN nipis untuk melaksanakan HEMT biasa dengan rintangan sumber ekstrinsik yang kecil. Idea utama ialah menggunakan medan terdorong polarisasi dalam lapisan penutup InGaN, yang mana jalur pengaliran dinaikkan membawa kepada operasi yang dimatikan secara normal. HEMT yang direka dengan In0.2Ga0.8Lapisan penutup N dengan ketebalan 5 nm menunjukkan operasi biasa dimatikan dengan voltan ambang 0.4 V dan transkonduktans maksimum 85 mS/mm untuk peranti dengan gerbang sepanjang 1.9-µm. Dengan menggoreskan In0.2Ga0.8Lapisan penutup N di rantau kecuali di bawah pintu pagar menggunakan get dan elektrod ohmik sebagai topeng goresan, rintangan kepingan telah menurun daripada 2.7 kepada 0.75 kΩ/
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Salinan
Masafumi ITO, Shigeru KISHIMOTO, Fumihiko NAKAMURA, Takashi MIZUTANI, "Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 989-993, July 2008, doi: 10.1093/ietele/e91-c.7.989.
Abstract: We have fabricated AlGaN/GaN HEMTs with a thin InGaN cap layer to implement normally-off HEMTs with a small extrinsic source resistance. The key idea is to employ the polarization-induced field in the InGaN cap layer, by which the conduction band is raised leading to the normally-off operation. Fabricated HEMT with an In0.2Ga0.8N cap layer with a thickness of 5 nm showed normally-off operation with a threshold voltage of 0.4 V and a maximum transconductance of 85 mS/mm for the device with a 1.9-µm-long gate. By etching-off the In0.2Ga0.8N cap layer at the region except under the gate using gate and ohmic electrodes as etching masks, the sheet resistance has decreased from 2.7 to 0.75 kΩ/
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.989/_p
Salinan
@ARTICLE{e91-c_7_989,
author={Masafumi ITO, Shigeru KISHIMOTO, Fumihiko NAKAMURA, Takashi MIZUTANI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer},
year={2008},
volume={E91-C},
number={7},
pages={989-993},
abstract={We have fabricated AlGaN/GaN HEMTs with a thin InGaN cap layer to implement normally-off HEMTs with a small extrinsic source resistance. The key idea is to employ the polarization-induced field in the InGaN cap layer, by which the conduction band is raised leading to the normally-off operation. Fabricated HEMT with an In0.2Ga0.8N cap layer with a thickness of 5 nm showed normally-off operation with a threshold voltage of 0.4 V and a maximum transconductance of 85 mS/mm for the device with a 1.9-µm-long gate. By etching-off the In0.2Ga0.8N cap layer at the region except under the gate using gate and ohmic electrodes as etching masks, the sheet resistance has decreased from 2.7 to 0.75 kΩ/
keywords={},
doi={10.1093/ietele/e91-c.7.989},
ISSN={1745-1353},
month={July},}
Salinan
TY - JOUR
TI - Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 989
EP - 993
AU - Masafumi ITO
AU - Shigeru KISHIMOTO
AU - Fumihiko NAKAMURA
AU - Takashi MIZUTANI
PY - 2008
DO - 10.1093/ietele/e91-c.7.989
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - We have fabricated AlGaN/GaN HEMTs with a thin InGaN cap layer to implement normally-off HEMTs with a small extrinsic source resistance. The key idea is to employ the polarization-induced field in the InGaN cap layer, by which the conduction band is raised leading to the normally-off operation. Fabricated HEMT with an In0.2Ga0.8N cap layer with a thickness of 5 nm showed normally-off operation with a threshold voltage of 0.4 V and a maximum transconductance of 85 mS/mm for the device with a 1.9-µm-long gate. By etching-off the In0.2Ga0.8N cap layer at the region except under the gate using gate and ohmic electrodes as etching masks, the sheet resistance has decreased from 2.7 to 0.75 kΩ/
ER -