The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Transistor Kesan Medan Semikonduktor Penebat Logam AlN/GaN (MISFET) telah direka, disimulasikan dan dibuat. Pengukuran DC, S-parameter dan kuasa juga dilakukan. Simulasi resapan hanyut menggunakan DESSIS berbanding MISFET AlN/GaN dan Al32Ga68N/GaN Heterostructure FETs (HFETs) dengan geometri yang sama. Keputusan simulasi menunjukkan kelebihan MISFET AlN/GaN dari segi arus tepu yang lebih tinggi, kebocoran pintu yang lebih rendah dan transkonduktans yang lebih tinggi daripada HFET AlGaN/GaN. Keputusan pertama daripada peranti AlN/GaN yang direka dengan panjang get 1 µm dan lebar get 200 µm menunjukkan ketumpatan arus longkang maksimum sebanyak
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Salinan
Sanghyun SEO, Kaustav GHOSE, Guang Yuan ZHAO, Dimitris PAVLIDIS, "AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 994-1000, July 2008, doi: 10.1093/ietele/e91-c.7.994.
Abstract: AlN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) were designed, simulated and fabricated. DC, S-parameter and power measurements were also performed. Drift-diffusion simulations using DESSIS compared AlN/GaN MISFETs and Al32Ga68N/GaN Heterostructure FETs (HFETs) with the same geometries. The simulation results show the advantages of AlN/GaN MISFETs in terms of higher saturation current, lower gate leakage and higher transconductance than AlGaN/GaN HFETs. First results from fabricated AlN/GaN devices with 1 µm gate length and 200 µm gate width showed a maximum drain current density of
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.994/_p
Salinan
@ARTICLE{e91-c_7_994,
author={Sanghyun SEO, Kaustav GHOSE, Guang Yuan ZHAO, Dimitris PAVLIDIS, },
journal={IEICE TRANSACTIONS on Electronics},
title={AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate},
year={2008},
volume={E91-C},
number={7},
pages={994-1000},
abstract={AlN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) were designed, simulated and fabricated. DC, S-parameter and power measurements were also performed. Drift-diffusion simulations using DESSIS compared AlN/GaN MISFETs and Al32Ga68N/GaN Heterostructure FETs (HFETs) with the same geometries. The simulation results show the advantages of AlN/GaN MISFETs in terms of higher saturation current, lower gate leakage and higher transconductance than AlGaN/GaN HFETs. First results from fabricated AlN/GaN devices with 1 µm gate length and 200 µm gate width showed a maximum drain current density of
keywords={},
doi={10.1093/ietele/e91-c.7.994},
ISSN={1745-1353},
month={July},}
Salinan
TY - JOUR
TI - AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate
T2 - IEICE TRANSACTIONS on Electronics
SP - 994
EP - 1000
AU - Sanghyun SEO
AU - Kaustav GHOSE
AU - Guang Yuan ZHAO
AU - Dimitris PAVLIDIS
PY - 2008
DO - 10.1093/ietele/e91-c.7.994
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - AlN/GaN Metal Insulator Semiconductor Field Effect Transistors (MISFETs) were designed, simulated and fabricated. DC, S-parameter and power measurements were also performed. Drift-diffusion simulations using DESSIS compared AlN/GaN MISFETs and Al32Ga68N/GaN Heterostructure FETs (HFETs) with the same geometries. The simulation results show the advantages of AlN/GaN MISFETs in terms of higher saturation current, lower gate leakage and higher transconductance than AlGaN/GaN HFETs. First results from fabricated AlN/GaN devices with 1 µm gate length and 200 µm gate width showed a maximum drain current density of
ER -