The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Transistor bipolar silikon berfrekuensi tinggi dan hingar rendah yang boleh digunakan dalam sistem komunikasi optik lebih 10 Gb/s dan sistem komunikasi tanpa wayar telah dibangunkan. Transistor bipolar silikon telah difabrikasi menggunakan teknologi logam/IDP (SMI) jajaran sendiri, yang menghasilkan elektrod asas jajaran sendiri bagi lapisan bertindan logam dan poli-Si (IDP) terdop in-situ oleh tungsten CVD terpilih suhu rendah. Ia memberikan rintangan asas yang rendah dan kekerapan pemotongan tinggi. Rintangan asas dikurangkan kepada separuh daripada transistor dengan elektrod asas poli-Si konvensional. Dengan menggunakan teknologi SMI dan mengoptimumkan kedalaman pemancar dan pangkalan pautan, kami mencapai kekerapan ayunan maksimum 80 GHz, kelewatan pintu minimum dalam ECL sebanyak 11.6 ps, dan angka hingar minimum 0.34 dB pada 2 GHz, yang merupakan prestasi tertinggi antara yang diperoleh daripada transistor bipolar asas Si yang ditanam ion, dan setanding dengan transistor bipolar heterojunction asas SiGe.
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Salinan
Hiromi SHIMAMOTO, Takahiro ONAI, Eiji OHUE, Masamichi TANABE, Katsuyoshi WASHIO, "High-Frequency, Low-Noise Si Bipolar Transistor Fabricated Using Self-Aligned Metal/IDP Technology" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 11, pp. 2007-2012, November 1999, doi: .
Abstract: A high-frequency, low-noise silicon bipolar transistor that can be used in over-10 Gb/s optical communication systems and wireless communication systems has been developed. The silicon bipolar transistor was fabricated using self-aligned metal/IDP (SMI) technology, which produces a self-aligned base electrode of stacked layers of metal and in-situ doped poly-Si (IDP) by low-temperature selective tungsten CVD. It provides a low base resistance and high-cutoff frequency. The base resistance is reduced to half that of a transistor with a conventional poly-Si base electrode. By using the SMI technology and optimizing the depth of the emitter and the link base, we achieved the maximum oscillation frequency of 80 GHz, a minimum gate delay in an ECL of 11.6 ps, and the minimum noise figure of 0.34 dB at 2 GHz, which are the highest performances among those obtained from ion-implanted base Si bipolar transistors, and are comparable to those of SiGe base heterojunction bipolar transistors.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_11_2007/_p
Salinan
@ARTICLE{e82-c_11_2007,
author={Hiromi SHIMAMOTO, Takahiro ONAI, Eiji OHUE, Masamichi TANABE, Katsuyoshi WASHIO, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Frequency, Low-Noise Si Bipolar Transistor Fabricated Using Self-Aligned Metal/IDP Technology},
year={1999},
volume={E82-C},
number={11},
pages={2007-2012},
abstract={A high-frequency, low-noise silicon bipolar transistor that can be used in over-10 Gb/s optical communication systems and wireless communication systems has been developed. The silicon bipolar transistor was fabricated using self-aligned metal/IDP (SMI) technology, which produces a self-aligned base electrode of stacked layers of metal and in-situ doped poly-Si (IDP) by low-temperature selective tungsten CVD. It provides a low base resistance and high-cutoff frequency. The base resistance is reduced to half that of a transistor with a conventional poly-Si base electrode. By using the SMI technology and optimizing the depth of the emitter and the link base, we achieved the maximum oscillation frequency of 80 GHz, a minimum gate delay in an ECL of 11.6 ps, and the minimum noise figure of 0.34 dB at 2 GHz, which are the highest performances among those obtained from ion-implanted base Si bipolar transistors, and are comparable to those of SiGe base heterojunction bipolar transistors.},
keywords={},
doi={},
ISSN={},
month={November},}
Salinan
TY - JOUR
TI - High-Frequency, Low-Noise Si Bipolar Transistor Fabricated Using Self-Aligned Metal/IDP Technology
T2 - IEICE TRANSACTIONS on Electronics
SP - 2007
EP - 2012
AU - Hiromi SHIMAMOTO
AU - Takahiro ONAI
AU - Eiji OHUE
AU - Masamichi TANABE
AU - Katsuyoshi WASHIO
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1999
AB - A high-frequency, low-noise silicon bipolar transistor that can be used in over-10 Gb/s optical communication systems and wireless communication systems has been developed. The silicon bipolar transistor was fabricated using self-aligned metal/IDP (SMI) technology, which produces a self-aligned base electrode of stacked layers of metal and in-situ doped poly-Si (IDP) by low-temperature selective tungsten CVD. It provides a low base resistance and high-cutoff frequency. The base resistance is reduced to half that of a transistor with a conventional poly-Si base electrode. By using the SMI technology and optimizing the depth of the emitter and the link base, we achieved the maximum oscillation frequency of 80 GHz, a minimum gate delay in an ECL of 11.6 ps, and the minimum noise figure of 0.34 dB at 2 GHz, which are the highest performances among those obtained from ion-implanted base Si bipolar transistors, and are comparable to those of SiGe base heterojunction bipolar transistors.
ER -