The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kertas kerja ini membentangkan teknologi untuk operasi lebih 40-Gbit/s bagi IC HEMT berasaskan InP untuk sistem komunikasi optik masa hadapan. Sambungan berkelajuan tinggi menggunakan filem benzocyclobutene (BCB) berkebolehan rendah sebagai penebat antara lapisan mengurangkan kelewatan interkoneksi dan menghasilkan operasi litar digital berkelajuan tinggi. Pembahagi frekuensi statik dan pemultipleks 2 : 1 menggunakan sambungan baru ini masing-masing menunjukkan operasi 49-GHz dan 80-Gbit/s. IC digital/analog berkelajuan ultra tinggi yang direka menggunakan HEMT telah digunakan dalam eksperimen penghantaran optik 40 Gbit/s dan menunjukkan prestasi kadar ralat bit yang baik. Proses ceruk dua langkah baru untuk etsa ceruk pintu dengan ketara meningkatkan prestasi HEMT berasaskan InP dan didapati menjanjikan untuk peranti ultrashort-gate masa hadapan.
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Salinan
Yohtaro UMEDA, Takatomo ENOKI, Taiichi OTSUJI, Tetsuya SUEMITSU, Haruki YOKOYAMA, Yasunobu ISHII, "Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 3, pp. 409-418, March 1999, doi: .
Abstract: This paper presents the technologies for over-40-Gbit/s operation of InP-based HEMT ICs for future optical communication systems. High-speed interconnection using low-permittivity benzocyclobutene (BCB) film as an inter-layer insulator decreases interconnection delay and results in high-speed operation of digital circuits. A static frequency divider and a 2 : 1 multiplexer using this novel interconnection demonstrate 49-GHz and 80-Gbit/s operation, respectively. Ultrahigh-speed digital/analog ICs fabricated using the HEMTs were used in 40 Gbit/s optical transmission experiment and showed good bit-error-rate performance. A novel two-step recess process for gate recess etching considerably improves the performance of InP-based HEMTs and is found to be promising for future ultrashort-gate devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_3_409/_p
Salinan
@ARTICLE{e82-c_3_409,
author={Yohtaro UMEDA, Takatomo ENOKI, Taiichi OTSUJI, Tetsuya SUEMITSU, Haruki YOKOYAMA, Yasunobu ISHII, },
journal={IEICE TRANSACTIONS on Electronics},
title={Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems},
year={1999},
volume={E82-C},
number={3},
pages={409-418},
abstract={This paper presents the technologies for over-40-Gbit/s operation of InP-based HEMT ICs for future optical communication systems. High-speed interconnection using low-permittivity benzocyclobutene (BCB) film as an inter-layer insulator decreases interconnection delay and results in high-speed operation of digital circuits. A static frequency divider and a 2 : 1 multiplexer using this novel interconnection demonstrate 49-GHz and 80-Gbit/s operation, respectively. Ultrahigh-speed digital/analog ICs fabricated using the HEMTs were used in 40 Gbit/s optical transmission experiment and showed good bit-error-rate performance. A novel two-step recess process for gate recess etching considerably improves the performance of InP-based HEMTs and is found to be promising for future ultrashort-gate devices.},
keywords={},
doi={},
ISSN={},
month={March},}
Salinan
TY - JOUR
TI - Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems
T2 - IEICE TRANSACTIONS on Electronics
SP - 409
EP - 418
AU - Yohtaro UMEDA
AU - Takatomo ENOKI
AU - Taiichi OTSUJI
AU - Tetsuya SUEMITSU
AU - Haruki YOKOYAMA
AU - Yasunobu ISHII
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1999
AB - This paper presents the technologies for over-40-Gbit/s operation of InP-based HEMT ICs for future optical communication systems. High-speed interconnection using low-permittivity benzocyclobutene (BCB) film as an inter-layer insulator decreases interconnection delay and results in high-speed operation of digital circuits. A static frequency divider and a 2 : 1 multiplexer using this novel interconnection demonstrate 49-GHz and 80-Gbit/s operation, respectively. Ultrahigh-speed digital/analog ICs fabricated using the HEMTs were used in 40 Gbit/s optical transmission experiment and showed good bit-error-rate performance. A novel two-step recess process for gate recess etching considerably improves the performance of InP-based HEMTs and is found to be promising for future ultrashort-gate devices.
ER -