The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Bahagian hadapan optik dan modul IC penguat teragih, kedua-duanya mengandungi GaAs heterojunction-bipolar-transistor (HBT), telah dibangunkan untuk penerima optik 40 Gb/s. Untuk mencapai operasi berkelajuan tinggi, elemen dalam modul termasuk IC dan talian isyarat, telah direka untuk mencapai lebar jalur yang lebih luas dengan pantulan elektrik yang lebih rendah. Pengaruh induktans wayar ikatan telah diambil kira dalam mengoptimumkan parameter IC. Bahagian hadapan optik, yang terdiri daripada pin-fotodiod pandu gelombang dan IC prapenguat HBT, mempamerkan keuntungan transimpedans sebanyak 43 dBΩ dan lebar jalur 31 GHz. Modul IC penguat yang diedarkan mencapai keuntungan sebanyak 9 dB dan lebar jalur 39 GHz. Penerima optik 40-Gb/s yang dibina dengan modul ini mempamerkan sensitiviti penerima yang tinggi iaitu -28. 2 dBm untuk isyarat kembali-ke-sifar optik 40-Gb/s.
Risato OHHIRA
Yasushi AMAMIYA
Takaki NIWA
Nobuo NAGANO
Takeshi TAKEUCHI
Chiharu KURIOKA
Tomohiro CHUZENJI
Kiyoshi FUKUCHI
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Salinan
Risato OHHIRA, Yasushi AMAMIYA, Takaki NIWA, Nobuo NAGANO, Takeshi TAKEUCHI, Chiharu KURIOKA, Tomohiro CHUZENJI, Kiyoshi FUKUCHI, "AlGaAs/InGaAs HBT IC Modules for 40-Gb/s Optical Receiver" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 3, pp. 448-455, March 1999, doi: .
Abstract: Optical frontend and distributed amplifier IC modules, both containing GaAs heterojunction-bipolar-transistors (HBT), have been developed for 40 Gb/s optical receiver. To achieve high-speed operations, the elements in the modules including the IC and signal lines, were designed to achieve a wider bandwidth with lower electrical reflection. The influence of a bonding-wire inductance was taken into particular account in optimizing the parameters of the ICs. The optical frontend, consisting of a waveguide pin-photodiode and an HBT preamplifier IC, exhibits a transimpedance gain of 43 dBΩ and a bandwidth of 31 GHz. The distributed amplifier IC module achieves a gain of 9 dB and a bandwidth of 39 GHz. A 40-Gb/s optical receiver constructed with these modules exhibited a high receiver sensitivity of -28. 2 dBm for a 40-Gb/s optical return-to-zero signal.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_3_448/_p
Salinan
@ARTICLE{e82-c_3_448,
author={Risato OHHIRA, Yasushi AMAMIYA, Takaki NIWA, Nobuo NAGANO, Takeshi TAKEUCHI, Chiharu KURIOKA, Tomohiro CHUZENJI, Kiyoshi FUKUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={AlGaAs/InGaAs HBT IC Modules for 40-Gb/s Optical Receiver},
year={1999},
volume={E82-C},
number={3},
pages={448-455},
abstract={Optical frontend and distributed amplifier IC modules, both containing GaAs heterojunction-bipolar-transistors (HBT), have been developed for 40 Gb/s optical receiver. To achieve high-speed operations, the elements in the modules including the IC and signal lines, were designed to achieve a wider bandwidth with lower electrical reflection. The influence of a bonding-wire inductance was taken into particular account in optimizing the parameters of the ICs. The optical frontend, consisting of a waveguide pin-photodiode and an HBT preamplifier IC, exhibits a transimpedance gain of 43 dBΩ and a bandwidth of 31 GHz. The distributed amplifier IC module achieves a gain of 9 dB and a bandwidth of 39 GHz. A 40-Gb/s optical receiver constructed with these modules exhibited a high receiver sensitivity of -28. 2 dBm for a 40-Gb/s optical return-to-zero signal.},
keywords={},
doi={},
ISSN={},
month={March},}
Salinan
TY - JOUR
TI - AlGaAs/InGaAs HBT IC Modules for 40-Gb/s Optical Receiver
T2 - IEICE TRANSACTIONS on Electronics
SP - 448
EP - 455
AU - Risato OHHIRA
AU - Yasushi AMAMIYA
AU - Takaki NIWA
AU - Nobuo NAGANO
AU - Takeshi TAKEUCHI
AU - Chiharu KURIOKA
AU - Tomohiro CHUZENJI
AU - Kiyoshi FUKUCHI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1999
AB - Optical frontend and distributed amplifier IC modules, both containing GaAs heterojunction-bipolar-transistors (HBT), have been developed for 40 Gb/s optical receiver. To achieve high-speed operations, the elements in the modules including the IC and signal lines, were designed to achieve a wider bandwidth with lower electrical reflection. The influence of a bonding-wire inductance was taken into particular account in optimizing the parameters of the ICs. The optical frontend, consisting of a waveguide pin-photodiode and an HBT preamplifier IC, exhibits a transimpedance gain of 43 dBΩ and a bandwidth of 31 GHz. The distributed amplifier IC module achieves a gain of 9 dB and a bandwidth of 39 GHz. A 40-Gb/s optical receiver constructed with these modules exhibited a high receiver sensitivity of -28. 2 dBm for a 40-Gb/s optical return-to-zero signal.
ER -