The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kertas ini menerangkan modul IC penguat teragih dan modul IC pengedar isyarat 1 : 2 yang diedarkan untuk sistem penghantaran optik 40-Gbit/s. IC ini direka bentuk dengan teknik reka bentuk litar teragih dan jalur mikro terbalik dan direka menggunakan 0. MESFET GaAs 1-µm-panjang pintu dengan struktur sambung berbilang lapisan. Ini telah dipasang pada substrat berbilang lapisan filem nipis dalam pakej rongga bersaiz cip melalui teknik ikatan flip-cip yang menggunakan benjolan microsolder yang dipindahkan. Modul penguat mencapai lebar jalur 3-dB lebih daripada 50 GHz dan keuntungan sebanyak 8 dB. Jalur lebar 3-dB bagi modul pengedar isyarat 1 : 2 ialah 40 GHz dan kerugian ialah 2 dB. Modul ini ditunjukkan pada 40 Gbit/s dan pembukaan mata yang jelas telah disahkan.
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Salinan
Hiroyuki KIKUCHI, Hideki TSUNETSUGU, Makoto HIRANO, Satoshi YAMAGUCHI, Yuhki IMAI, "Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 3, pp. 475-482, March 1999, doi: .
Abstract: This paper describes a distributed amplifier IC module and a distributed 1 : 2 signal distributor IC module for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0. 1-µm-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1 : 2 signal distributor module was 40 GHz and the loss was 2 dB. These modules were demonstrated at 40 Gbit/s and clear eye openings were confirmed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_3_475/_p
Salinan
@ARTICLE{e82-c_3_475,
author={Hiroyuki KIKUCHI, Hideki TSUNETSUGU, Makoto HIRANO, Satoshi YAMAGUCHI, Yuhki IMAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding},
year={1999},
volume={E82-C},
number={3},
pages={475-482},
abstract={This paper describes a distributed amplifier IC module and a distributed 1 : 2 signal distributor IC module for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0. 1-µm-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1 : 2 signal distributor module was 40 GHz and the loss was 2 dB. These modules were demonstrated at 40 Gbit/s and clear eye openings were confirmed.},
keywords={},
doi={},
ISSN={},
month={March},}
Salinan
TY - JOUR
TI - Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding
T2 - IEICE TRANSACTIONS on Electronics
SP - 475
EP - 482
AU - Hiroyuki KIKUCHI
AU - Hideki TSUNETSUGU
AU - Makoto HIRANO
AU - Satoshi YAMAGUCHI
AU - Yuhki IMAI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1999
AB - This paper describes a distributed amplifier IC module and a distributed 1 : 2 signal distributor IC module for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0. 1-µm-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1 : 2 signal distributor module was 40 GHz and the loss was 2 dB. These modules were demonstrated at 40 Gbit/s and clear eye openings were confirmed.
ER -