The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Ia disahkan melalui simulasi bahawa SOI-DRAM boleh dikendalikan pada kelajuan tinggi dengan menggunakan struktur badan terapung. Beberapa kesan badan terapung dianalisis. Diterangkan bahawa ciri pengekalan dinamik tidak dikuasai oleh gandingan kapasitif dan pengagihan semula lubang. Dan diterangkan bahawa ciri-ciri tersebut ditentukan oleh arus bocor di kawasan persimpangan pn kecil badan terapung. Mengurangkan arus bocor simpang pn adalah penting untuk merealisasikan masa pengekalan yang lama. Jika kebocoran simpang pn ditekan kepada 10-18 A/µm, masa pengekalan dinamik 520 saat pada a VBSG 0.5 V boleh dicapai pada 27
Fukashi MORISHITA
Yasuo YAMAGUCHI
Takahisa EIMORI
Toshiyuki OASHI
Kazutami ARIMOTO
Yasuo INOUE
Tadashi NISHIMURA
Michihiro YAMADA
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Salinan
Fukashi MORISHITA, Yasuo YAMAGUCHI, Takahisa EIMORI, Toshiyuki OASHI, Kazutami ARIMOTO, Yasuo INOUE, Tadashi NISHIMURA, Michihiro YAMADA, "Analysis and Optimization of Floating Body Cell Operation for High-Speed SOI-DRAM" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 3, pp. 544-552, March 1999, doi: .
Abstract: It is confirmed by simulation that SOI-DRAMs can be operated at high speed by using the floating body structures. Several floating body effects are analyzed. It is described that the dynamic retention characteristics are not dominated by capacitive coupling and hole redistribution. And it is described that those characteristics are determined by the leakage current in the small pn-junction region of the floating body. Reducing pn junction leakage current is important for realizing a long retention time. If the pn junction leakage is suppressed to 10-18 A/µm, a dynamic retention time of 520 sec at a VBSG of 0.5 V can be achieved at 27
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_3_544/_p
Salinan
@ARTICLE{e82-c_3_544,
author={Fukashi MORISHITA, Yasuo YAMAGUCHI, Takahisa EIMORI, Toshiyuki OASHI, Kazutami ARIMOTO, Yasuo INOUE, Tadashi NISHIMURA, Michihiro YAMADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analysis and Optimization of Floating Body Cell Operation for High-Speed SOI-DRAM},
year={1999},
volume={E82-C},
number={3},
pages={544-552},
abstract={It is confirmed by simulation that SOI-DRAMs can be operated at high speed by using the floating body structures. Several floating body effects are analyzed. It is described that the dynamic retention characteristics are not dominated by capacitive coupling and hole redistribution. And it is described that those characteristics are determined by the leakage current in the small pn-junction region of the floating body. Reducing pn junction leakage current is important for realizing a long retention time. If the pn junction leakage is suppressed to 10-18 A/µm, a dynamic retention time of 520 sec at a VBSG of 0.5 V can be achieved at 27
keywords={},
doi={},
ISSN={},
month={March},}
Salinan
TY - JOUR
TI - Analysis and Optimization of Floating Body Cell Operation for High-Speed SOI-DRAM
T2 - IEICE TRANSACTIONS on Electronics
SP - 544
EP - 552
AU - Fukashi MORISHITA
AU - Yasuo YAMAGUCHI
AU - Takahisa EIMORI
AU - Toshiyuki OASHI
AU - Kazutami ARIMOTO
AU - Yasuo INOUE
AU - Tadashi NISHIMURA
AU - Michihiro YAMADA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1999
AB - It is confirmed by simulation that SOI-DRAMs can be operated at high speed by using the floating body structures. Several floating body effects are analyzed. It is described that the dynamic retention characteristics are not dominated by capacitive coupling and hole redistribution. And it is described that those characteristics are determined by the leakage current in the small pn-junction region of the floating body. Reducing pn junction leakage current is important for realizing a long retention time. If the pn junction leakage is suppressed to 10-18 A/µm, a dynamic retention time of 520 sec at a VBSG of 0.5 V can be achieved at 27
ER -