The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Makalah ini melaporkan penguat hingar rendah monolitik (LNA) jalur L dan jalur C yang direka dengan teknologi MOSFET/SIMOX (Pemisahan oleh Oksigen Terimplan) buat kali pertama. LNA jalur L mempamerkan Gain/(Pdc
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Salinan
Mitsuru HARADA, Tsuneo TSUKAHARA, "Low dc Power Si-MOSFET L- and C-Band Low Noise Amplifiers Fabricated by SIMOX Technology" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 3, pp. 553-558, March 1999, doi: .
Abstract: This paper reports L-band and C-band monolithic low noise amplifiers (LNA) fabricated with MOSFET/SIMOX (Separation by IMplanted OXygen) technology for the first time. The L-band LNA exhibits a Gain/(Pdc
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_3_553/_p
Salinan
@ARTICLE{e82-c_3_553,
author={Mitsuru HARADA, Tsuneo TSUKAHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low dc Power Si-MOSFET L- and C-Band Low Noise Amplifiers Fabricated by SIMOX Technology},
year={1999},
volume={E82-C},
number={3},
pages={553-558},
abstract={This paper reports L-band and C-band monolithic low noise amplifiers (LNA) fabricated with MOSFET/SIMOX (Separation by IMplanted OXygen) technology for the first time. The L-band LNA exhibits a Gain/(Pdc
keywords={},
doi={},
ISSN={},
month={March},}
Salinan
TY - JOUR
TI - Low dc Power Si-MOSFET L- and C-Band Low Noise Amplifiers Fabricated by SIMOX Technology
T2 - IEICE TRANSACTIONS on Electronics
SP - 553
EP - 558
AU - Mitsuru HARADA
AU - Tsuneo TSUKAHARA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1999
AB - This paper reports L-band and C-band monolithic low noise amplifiers (LNA) fabricated with MOSFET/SIMOX (Separation by IMplanted OXygen) technology for the first time. The L-band LNA exhibits a Gain/(Pdc
ER -