The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kertas kerja ini menerangkan penguat HFET AlGaAs/GaAs berkuasa tinggi dan herotan rendah yang dibangunkan untuk sistem stesen pangkalan selular digital. Kami telah membuktikan secara eksperimen bahawa ciri herotan seperti IMD (Intermodulation Distortion) atau NPR (Noise Power Ratio) secara drastik terdegradasi apabila nilai mutlak galangan litar pincang longkang pada frekuensi rendah adalah tinggi. Berdasarkan keputusan eksperimen, kami telah mereka bentuk litar pincang longkang untuk tidak mempengaruhi ciri herotan. Penguat yang dibangunkan menggunakan dua pasang cip GaAs pra-padanan yang dipasang pada satu pakej dan jumlah kuasa keluaran digabungkan dalam konfigurasi tolak-tarik dengan litar balun jalur mikro. Penguat tolak tarik menunjukkan prestasi terkini 140 W kuasa keluaran dengan keuntungan linear 11.5 dB pada 2.2 GHz. Di samping itu, ia mempamerkan prestasi herotan yang sangat rendah kurang daripada
Isao TAKENAKA
Hidemasa TAKAHASHI
Kazunori ASANO
Kohji ISHIKURA
Junko MORIKAWA
Hiroaki TSUTSUI
Masaaki KUZUHARA
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Salinan
Isao TAKENAKA, Hidemasa TAKAHASHI, Kazunori ASANO, Kohji ISHIKURA, Junko MORIKAWA, Hiroaki TSUTSUI, Masaaki KUZUHARA, "Improved IMD Characteristics in L/S-Band GaAs FET Power Amplifiers by Lowering Drain Bias Circuit Impedance" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 5, pp. 730-736, May 1999, doi: .
Abstract: This paper describes a high-power and low-distortion AlGaAs/GaAs HFET amplifier developed for digital cellular base station system. We proved experimentally that distortion characteristics such as IMD (Intermodulation Distortion) or NPR (Noise Power Ratio) are drastically degraded when the absolute value of the drain bias circuit impedance at low frequency are high. Based on the experimental results, we have designed the drain bias circuit not to influence the distortion characteristics. The developed amplifier employed two pairs of pre-matched GaAs chips mounted on a single package and the total output-power was combined in push-pull configuration with a microstrip balun circuit. The push-pull amplifier demonstrated state-of-the-art performance of 140 W output-power with 11.5 dB linear gain at 2.2 GHz. In addition, it exhibited extremely low distortion performance of less than
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_5_730/_p
Salinan
@ARTICLE{e82-c_5_730,
author={Isao TAKENAKA, Hidemasa TAKAHASHI, Kazunori ASANO, Kohji ISHIKURA, Junko MORIKAWA, Hiroaki TSUTSUI, Masaaki KUZUHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Improved IMD Characteristics in L/S-Band GaAs FET Power Amplifiers by Lowering Drain Bias Circuit Impedance},
year={1999},
volume={E82-C},
number={5},
pages={730-736},
abstract={This paper describes a high-power and low-distortion AlGaAs/GaAs HFET amplifier developed for digital cellular base station system. We proved experimentally that distortion characteristics such as IMD (Intermodulation Distortion) or NPR (Noise Power Ratio) are drastically degraded when the absolute value of the drain bias circuit impedance at low frequency are high. Based on the experimental results, we have designed the drain bias circuit not to influence the distortion characteristics. The developed amplifier employed two pairs of pre-matched GaAs chips mounted on a single package and the total output-power was combined in push-pull configuration with a microstrip balun circuit. The push-pull amplifier demonstrated state-of-the-art performance of 140 W output-power with 11.5 dB linear gain at 2.2 GHz. In addition, it exhibited extremely low distortion performance of less than
keywords={},
doi={},
ISSN={},
month={May},}
Salinan
TY - JOUR
TI - Improved IMD Characteristics in L/S-Band GaAs FET Power Amplifiers by Lowering Drain Bias Circuit Impedance
T2 - IEICE TRANSACTIONS on Electronics
SP - 730
EP - 736
AU - Isao TAKENAKA
AU - Hidemasa TAKAHASHI
AU - Kazunori ASANO
AU - Kohji ISHIKURA
AU - Junko MORIKAWA
AU - Hiroaki TSUTSUI
AU - Masaaki KUZUHARA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1999
AB - This paper describes a high-power and low-distortion AlGaAs/GaAs HFET amplifier developed for digital cellular base station system. We proved experimentally that distortion characteristics such as IMD (Intermodulation Distortion) or NPR (Noise Power Ratio) are drastically degraded when the absolute value of the drain bias circuit impedance at low frequency are high. Based on the experimental results, we have designed the drain bias circuit not to influence the distortion characteristics. The developed amplifier employed two pairs of pre-matched GaAs chips mounted on a single package and the total output-power was combined in push-pull configuration with a microstrip balun circuit. The push-pull amplifier demonstrated state-of-the-art performance of 140 W output-power with 11.5 dB linear gain at 2.2 GHz. In addition, it exhibited extremely low distortion performance of less than
ER -