The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Tahun-tahun kebelakangan ini telah menyaksikan kemajuan besar dalam pemahaman dan pemodelan kami tentang resapan gandingan dopan dan kecacatan dalam silikon semasa proses fabrikasi litar bersepadu. Walau bagaimanapun, pengecutan dimensi dan toleransi peranti yang sentiasa berkembang membawa kepada masalah baharu dan keperluan untuk model yang lebih baik. Dalam ulasan ini, kami menangani beberapa kemajuan dalam pemahaman tentang resapan pengantara kecacatan, memfokuskan pada persamaan dan parameter yang sesuai untuk pemodelan resapan dopan dalam struktur submikron.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Salinan
Scott T. DUNHAM, Alp H. GENCER, Srinivasan CHAKRAVARTHI, "Modeling of Dopant Diffusion in Silicon" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 6, pp. 800-812, June 1999, doi: .
Abstract: Recent years have seen great advances in our understanding and modeling of the coupled diffusion of dopants and defects in silicon during integrated circuit fabrication processes. However, the ever-progressing shrinkage of device dimensions and tolerances leads to new problems and a need for even better models. In this review, we address some of the advances in the understanding of defect-mediated diffusion, focusing on the equations and parameters appropriate for modeling of dopant diffusion in submicron structures.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_6_800/_p
Salinan
@ARTICLE{e82-c_6_800,
author={Scott T. DUNHAM, Alp H. GENCER, Srinivasan CHAKRAVARTHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Modeling of Dopant Diffusion in Silicon},
year={1999},
volume={E82-C},
number={6},
pages={800-812},
abstract={Recent years have seen great advances in our understanding and modeling of the coupled diffusion of dopants and defects in silicon during integrated circuit fabrication processes. However, the ever-progressing shrinkage of device dimensions and tolerances leads to new problems and a need for even better models. In this review, we address some of the advances in the understanding of defect-mediated diffusion, focusing on the equations and parameters appropriate for modeling of dopant diffusion in submicron structures.},
keywords={},
doi={},
ISSN={},
month={June},}
Salinan
TY - JOUR
TI - Modeling of Dopant Diffusion in Silicon
T2 - IEICE TRANSACTIONS on Electronics
SP - 800
EP - 812
AU - Scott T. DUNHAM
AU - Alp H. GENCER
AU - Srinivasan CHAKRAVARTHI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1999
AB - Recent years have seen great advances in our understanding and modeling of the coupled diffusion of dopants and defects in silicon during integrated circuit fabrication processes. However, the ever-progressing shrinkage of device dimensions and tolerances leads to new problems and a need for even better models. In this review, we address some of the advances in the understanding of defect-mediated diffusion, focusing on the equations and parameters appropriate for modeling of dopant diffusion in submicron structures.
ER -