The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Dengan kemajuan teknologi LSI, saiz peranti elektronik kini mengecil kepada rantau nano meter. Dalam peranti ultra kecil sedemikian, adalah amat diperlukan untuk mengambil kira kesan mekanikal kuantum dalam pemodelan peranti. Dalam makalah ini, kita mula-mula mengkaji pendekatan kepada pemodelan mekanikal kuantum pengangkutan pembawa dalam peranti semikonduktor ultra kecil. Kemudian, kami mencadangkan model peranti kuantum baru berdasarkan penyelesaian langsung persamaan Boltzmann untuk kegunaan praktikal berbilang dimensi. Dalam model ini, kesan kuantum diwakili dari segi potensi diperbetulkan secara mekanikal kuantum dalam persamaan Boltzmann klasik.
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Salinan
Hideaki TSUCHIYA, Tanroku MIYOSHI, "Quantum Transport Modeling of Ultrasmall Semiconductor Devices" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 6, pp. 880-888, June 1999, doi: .
Abstract: With the progress of LSI technology, the electronic device size is presently scaling down to the nano-meter region. In such an ultrasmall device, it is indispensable to take quantum mechanical effects into account in device modeling. In this paper, we first review the approaches to the quantum mechanical modeling of carrier transport in ultrasmall semiconductor devices. Then, we propose a novel quantum device model based upon a direct solution of the Boltzmann equation for multi-dimensional practical use. In this model, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_6_880/_p
Salinan
@ARTICLE{e82-c_6_880,
author={Hideaki TSUCHIYA, Tanroku MIYOSHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Quantum Transport Modeling of Ultrasmall Semiconductor Devices},
year={1999},
volume={E82-C},
number={6},
pages={880-888},
abstract={With the progress of LSI technology, the electronic device size is presently scaling down to the nano-meter region. In such an ultrasmall device, it is indispensable to take quantum mechanical effects into account in device modeling. In this paper, we first review the approaches to the quantum mechanical modeling of carrier transport in ultrasmall semiconductor devices. Then, we propose a novel quantum device model based upon a direct solution of the Boltzmann equation for multi-dimensional practical use. In this model, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation.},
keywords={},
doi={},
ISSN={},
month={June},}
Salinan
TY - JOUR
TI - Quantum Transport Modeling of Ultrasmall Semiconductor Devices
T2 - IEICE TRANSACTIONS on Electronics
SP - 880
EP - 888
AU - Hideaki TSUCHIYA
AU - Tanroku MIYOSHI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1999
AB - With the progress of LSI technology, the electronic device size is presently scaling down to the nano-meter region. In such an ultrasmall device, it is indispensable to take quantum mechanical effects into account in device modeling. In this paper, we first review the approaches to the quantum mechanical modeling of carrier transport in ultrasmall semiconductor devices. Then, we propose a novel quantum device model based upon a direct solution of the Boltzmann equation for multi-dimensional practical use. In this model, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation.
ER -