The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Operasi 49-GHz untuk pembahagi frekuensi statik tercanggih menggunakan FET dicapai dengan 0.1-µm-gate InAlAs/InGaAs/InP HEMT berprestasi tinggi dan sambung dua lapisan berkelajuan tinggi dengan BCB berkebolehan rendah yang tebal filem dielektrik antara lapisan. Satu percubaan menunjukkan bahawa kelewatan perambatan untuk garis lapisan atas dalam sambung dua lapisan adalah kurang daripada separuh daripada itu untuk sambung satu lapisan konvensional secara langsung pada substrat InP. Pembahagi frekuensi dengan sambung dua lapisan adalah kira-kira 20% lebih pantas daripada yang konvensional dengan sambung satu lapisan. Analisis masa tunda mendedahkan bahawa peningkatan kelajuan ini disebabkan oleh penurunan kelewatan perambatan antara sambungan.
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Salinan
Yohtaro UMEDA, Kazuo OSAFUNE, Takatomo ENOKI, Haruki YOKOYAMA, Yasunobu ISHII, "49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 7, pp. 1080-1085, July 1999, doi: .
Abstract: 49-GHz operation for a state-of-the-art static frequency divider using FETs is achieved with high-performance 0.1-µm-gate InAlAs/InGaAs/InP HEMTs and high-speed double-layer interconnections with a thick low-permittivity BCB inter-layer dielectric film. An experiment shows that the propagation delay for the upper-layer line in the double-layer interconnections is less than half of that for the conventional single-layer interconnections directly on InP-substrate. The frequency divider with the double-layer interconnections is about 20% faster than the conventional one with the single-layer interconnections. A delay time analysis reveals that this speed increase is due to the decrease in interconnection propagation delay.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_7_1080/_p
Salinan
@ARTICLE{e82-c_7_1080,
author={Yohtaro UMEDA, Kazuo OSAFUNE, Takatomo ENOKI, Haruki YOKOYAMA, Yasunobu ISHII, },
journal={IEICE TRANSACTIONS on Electronics},
title={49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs},
year={1999},
volume={E82-C},
number={7},
pages={1080-1085},
abstract={49-GHz operation for a state-of-the-art static frequency divider using FETs is achieved with high-performance 0.1-µm-gate InAlAs/InGaAs/InP HEMTs and high-speed double-layer interconnections with a thick low-permittivity BCB inter-layer dielectric film. An experiment shows that the propagation delay for the upper-layer line in the double-layer interconnections is less than half of that for the conventional single-layer interconnections directly on InP-substrate. The frequency divider with the double-layer interconnections is about 20% faster than the conventional one with the single-layer interconnections. A delay time analysis reveals that this speed increase is due to the decrease in interconnection propagation delay.},
keywords={},
doi={},
ISSN={},
month={July},}
Salinan
TY - JOUR
TI - 49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1080
EP - 1085
AU - Yohtaro UMEDA
AU - Kazuo OSAFUNE
AU - Takatomo ENOKI
AU - Haruki YOKOYAMA
AU - Yasunobu ISHII
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1999
AB - 49-GHz operation for a state-of-the-art static frequency divider using FETs is achieved with high-performance 0.1-µm-gate InAlAs/InGaAs/InP HEMTs and high-speed double-layer interconnections with a thick low-permittivity BCB inter-layer dielectric film. An experiment shows that the propagation delay for the upper-layer line in the double-layer interconnections is less than half of that for the conventional single-layer interconnections directly on InP-substrate. The frequency divider with the double-layer interconnections is about 20% faster than the conventional one with the single-layer interconnections. A delay time analysis reveals that this speed increase is due to the decrease in interconnection propagation delay.
ER -