The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kami telah mencadangkan dan membuat TFT poli-Si baharu yang menggunakan kawasan dop terpilih dalam lapisan aktif. Dalam TFT poli-Si yang dicadangkan, kawasan terdop terpilih di mana kepekatan doping adalah sama dengan sumber/longkang, mengurangkan panjang saluran berkesan semasa dalam keadaan. Di bawah keadaan luar, kawasan dop terpilih boleh mengurangkan medan elektrik sisi yang teraruh berhampiran longkang dan mengurangkan arus kebocoran dengan ketara. Data percubaan TFT yang dicadangkan mempamerkan arus semasa yang tinggi, arus bocor rendah dan voltan ambang rendah. Pembuatan TFT yang dicadangkan agak mudah; langkah-langkah yang diperlukan untuk TFT yang dicadangkan dikurangkan kerana implantasi ion dos yang tinggi untuk sumber/saliran dan kawasan dop terpilih dilakukan serentak sebelum langkah penyinaran laser excimer.
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Salinan
Min-Cheol LEE, Jae-Hong JEON, Juhn-Suk YOO, Min-Koo HAN, "New Poly-Si TFT with Selectively Doped Region in the Active Layer" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 10, pp. 1575-1578, October 2000, doi: .
Abstract: We have proposed and fabricated a new poly-Si TFT employing the selectively doped regions in the active layer. In the proposed poly-Si TFTs, the selectively doped regions where doping concentration is identical to that of the source/drain, reduce the effective channel length during the on-state. Under the off-state, the selectively doped regions may reduce the lateral electric field induced near the drain and reduce the leakage current considerably. The experimental data of the proposed TFT exhibit high on-current, low leakage current and low threshold voltage. The fabrication of the proposed TFT is rather simple; the required steps for the proposed TFT are reduced because high dosage ion-implantation for the source/drain and the selectively doped regions is performed simultaneously prior to excimer laser irradiation step.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_10_1575/_p
Salinan
@ARTICLE{e83-c_10_1575,
author={Min-Cheol LEE, Jae-Hong JEON, Juhn-Suk YOO, Min-Koo HAN, },
journal={IEICE TRANSACTIONS on Electronics},
title={New Poly-Si TFT with Selectively Doped Region in the Active Layer},
year={2000},
volume={E83-C},
number={10},
pages={1575-1578},
abstract={We have proposed and fabricated a new poly-Si TFT employing the selectively doped regions in the active layer. In the proposed poly-Si TFTs, the selectively doped regions where doping concentration is identical to that of the source/drain, reduce the effective channel length during the on-state. Under the off-state, the selectively doped regions may reduce the lateral electric field induced near the drain and reduce the leakage current considerably. The experimental data of the proposed TFT exhibit high on-current, low leakage current and low threshold voltage. The fabrication of the proposed TFT is rather simple; the required steps for the proposed TFT are reduced because high dosage ion-implantation for the source/drain and the selectively doped regions is performed simultaneously prior to excimer laser irradiation step.},
keywords={},
doi={},
ISSN={},
month={October},}
Salinan
TY - JOUR
TI - New Poly-Si TFT with Selectively Doped Region in the Active Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 1575
EP - 1578
AU - Min-Cheol LEE
AU - Jae-Hong JEON
AU - Juhn-Suk YOO
AU - Min-Koo HAN
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2000
AB - We have proposed and fabricated a new poly-Si TFT employing the selectively doped regions in the active layer. In the proposed poly-Si TFTs, the selectively doped regions where doping concentration is identical to that of the source/drain, reduce the effective channel length during the on-state. Under the off-state, the selectively doped regions may reduce the lateral electric field induced near the drain and reduce the leakage current considerably. The experimental data of the proposed TFT exhibit high on-current, low leakage current and low threshold voltage. The fabrication of the proposed TFT is rather simple; the required steps for the proposed TFT are reduced because high dosage ion-implantation for the source/drain and the selectively doped regions is performed simultaneously prior to excimer laser irradiation step.
ER -