The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Teknologi InP/InGaAs heterojunction bipolar transistor (HBT) asas berdop karbon untuk aplikasi gelombang milimeter dipersembahkan. Doping karbon ultra tinggi bagi lapisan InGaAs yang dipadankan dengan InP dengan kepekatan lubang melebihi 1
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Salinan
Jong-In SONG, "Chemical Beam Epitaxy Grown Carbon-Doped Base InP/InGaAs Heterojunction Bipolar Transistor Technology for Millimeter-Wave Applications" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 1, pp. 115-121, January 2000, doi: .
Abstract: Carbon-doped base InP/InGaAs heterojunction bipolar transistor (HBT) technology for millimeter-wave application is presented. Ultra-high carbon doping of InGaAs layers lattice-matched to InP with hole concentrations in excess of 1
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_1_115/_p
Salinan
@ARTICLE{e83-c_1_115,
author={Jong-In SONG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Chemical Beam Epitaxy Grown Carbon-Doped Base InP/InGaAs Heterojunction Bipolar Transistor Technology for Millimeter-Wave Applications},
year={2000},
volume={E83-C},
number={1},
pages={115-121},
abstract={Carbon-doped base InP/InGaAs heterojunction bipolar transistor (HBT) technology for millimeter-wave application is presented. Ultra-high carbon doping of InGaAs layers lattice-matched to InP with hole concentrations in excess of 1
keywords={},
doi={},
ISSN={},
month={January},}
Salinan
TY - JOUR
TI - Chemical Beam Epitaxy Grown Carbon-Doped Base InP/InGaAs Heterojunction Bipolar Transistor Technology for Millimeter-Wave Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 115
EP - 121
AU - Jong-In SONG
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2000
AB - Carbon-doped base InP/InGaAs heterojunction bipolar transistor (HBT) technology for millimeter-wave application is presented. Ultra-high carbon doping of InGaAs layers lattice-matched to InP with hole concentrations in excess of 1
ER -