The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kami melaporkan tentang fabrikasi dan pengendalian litar kuantum fluks tunggal (SFQ) semua-NbN dengan persimpangan terowong NbN/AlN/NbN yang dihalang secara rintangan yang direka pada substrat silikon. Arus genting berubah-ubah mengikut kira-kira
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Salinan
Hirotaka TERAI, Zhen WANG, "All-NbN Single Flux Quantum Circuits Based on NbN/AlN/NbN Tunnel Junctions" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 1, pp. 69-74, January 2000, doi: .
Abstract: We report on the fabrication and operation of all-NbN single flux quantum (SFQ) circuits with resistively shunted NbN/AlN/NbN tunnel junctions fabricated on silicon substrates. The critical current varied by about
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_1_69/_p
Salinan
@ARTICLE{e83-c_1_69,
author={Hirotaka TERAI, Zhen WANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={All-NbN Single Flux Quantum Circuits Based on NbN/AlN/NbN Tunnel Junctions},
year={2000},
volume={E83-C},
number={1},
pages={69-74},
abstract={We report on the fabrication and operation of all-NbN single flux quantum (SFQ) circuits with resistively shunted NbN/AlN/NbN tunnel junctions fabricated on silicon substrates. The critical current varied by about
keywords={},
doi={},
ISSN={},
month={January},}
Salinan
TY - JOUR
TI - All-NbN Single Flux Quantum Circuits Based on NbN/AlN/NbN Tunnel Junctions
T2 - IEICE TRANSACTIONS on Electronics
SP - 69
EP - 74
AU - Hirotaka TERAI
AU - Zhen WANG
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2000
AB - We report on the fabrication and operation of all-NbN single flux quantum (SFQ) circuits with resistively shunted NbN/AlN/NbN tunnel junctions fabricated on silicon substrates. The critical current varied by about
ER -