The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Diod laser II-VI telah dibuat menggunakan ZnCdSe/ZnS0.06Se0.94/ZnMgSSe struktur SCH pada GaAs, di mana ZnMgSSe pada asalnya dicadangkan oleh kumpulan kami. ZnMgSSe dipadankan kekisi dengan GaAs dan tenaga celah jalur ZnMgSSe lebih besar daripada ZnSe dan ZnS0.06Se0.94 kekisi dipadankan dengan GaAs. Bagi mekanisme pertumbuhan kristal, komposisi ZnMgSSe tidak berubah dan corak RHEED menjadi jerawatan dalam keadaan pertumbuhan kaya kumpulan II dan penggabungan S sukar dalam keadaan pertumbuhan kaya kumpulan VI. Daripada keputusan ini, kami menganggap bahawa keadaan pertumbuhan optimum ZnMgSSe adalah di rantau stoikiometrik (kedua-duanya (2
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Salinan
Hiroyuki OKUYAMA, "Review of II-VI Green Laser Diodes" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 4, pp. 536-545, April 2000, doi: .
Abstract: II-VI laser diode was fabricated using a ZnCdSe/ZnS0.06Se0.94/ZnMgSSe SCH structure on GaAs, in which ZnMgSSe was originally proposed by our group. ZnMgSSe is lattice-matched to GaAs and the bandgap energy of ZnMgSSe is larger than that of ZnSe and ZnS0.06Se0.94 lattice-matched to GaAs. As for the crystal growth mechanism, the composition of ZnMgSSe is not changed and the RHEED pattern becomes spotty in group II-rich growth conditions and S incorporation is difficult in group VI-rich growth conditions. From these results, we consider that the optimized growth condition of ZnMgSSe is in the stoichiometric region (both (2
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_536/_p
Salinan
@ARTICLE{e83-c_4_536,
author={Hiroyuki OKUYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Review of II-VI Green Laser Diodes},
year={2000},
volume={E83-C},
number={4},
pages={536-545},
abstract={II-VI laser diode was fabricated using a ZnCdSe/ZnS0.06Se0.94/ZnMgSSe SCH structure on GaAs, in which ZnMgSSe was originally proposed by our group. ZnMgSSe is lattice-matched to GaAs and the bandgap energy of ZnMgSSe is larger than that of ZnSe and ZnS0.06Se0.94 lattice-matched to GaAs. As for the crystal growth mechanism, the composition of ZnMgSSe is not changed and the RHEED pattern becomes spotty in group II-rich growth conditions and S incorporation is difficult in group VI-rich growth conditions. From these results, we consider that the optimized growth condition of ZnMgSSe is in the stoichiometric region (both (2
keywords={},
doi={},
ISSN={},
month={April},}
Salinan
TY - JOUR
TI - Review of II-VI Green Laser Diodes
T2 - IEICE TRANSACTIONS on Electronics
SP - 536
EP - 545
AU - Hiroyuki OKUYAMA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - II-VI laser diode was fabricated using a ZnCdSe/ZnS0.06Se0.94/ZnMgSSe SCH structure on GaAs, in which ZnMgSSe was originally proposed by our group. ZnMgSSe is lattice-matched to GaAs and the bandgap energy of ZnMgSSe is larger than that of ZnSe and ZnS0.06Se0.94 lattice-matched to GaAs. As for the crystal growth mechanism, the composition of ZnMgSSe is not changed and the RHEED pattern becomes spotty in group II-rich growth conditions and S incorporation is difficult in group VI-rich growth conditions. From these results, we consider that the optimized growth condition of ZnMgSSe is in the stoichiometric region (both (2
ER -