The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Modul penerima GaAs MMIC 20 GHz telah dibangunkan menggunakan proses teknologi HEMT 0.15 µm. Ia menggabungkan dua penguat hingar rendah hujung hadapan, pengadun diod seimbang berganda dan penapis. Kekerapan input RF berjulat 20.1 hingga 21 GHz dan output IF 1.1 hingga 2 GHz. Keputusan ujian menunjukkan keuntungan penukaran keseluruhan lebih daripada 27 dB, dan kurang daripada angka hingar 2.2 dB. Nisbah penolakan imej lebih daripada 21 dB telah diperolehi. Pengasingan antara port RF dan IF adalah lebih baik daripada 27 dB, dan antara LO dan IF adalah lebih daripada 50 dB.
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Salinan
Kyung-Wan YU, In-Bok YOM, Man-Seok UHM, Dong-Phil JANG, Jae-Hyun LEE, Seong-Pal LEE, "Low Noise K-Band MMIC Receiver Module" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 5, pp. 750-754, May 2000, doi: .
Abstract: A 20 GHz-band GaAs MMIC receiver module has been developed using 0.15 µm HEMT technology process. It incorporates two front end low noise amplifiers, a double balanced diode mixer, and filters. The RF input frequency ranges 20.1 to 21 GHz and the IF output 1.1 to 2 GHz. Test results show an overall conversion gain of more than 27 dB, and less than a 2.2 dB noise figure. The image-rejection ratio greater than 21 dB has been obtained. The isolation between RF and IF ports is better than 27 dB, and between LO and IF is more than 50 dB.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_5_750/_p
Salinan
@ARTICLE{e83-c_5_750,
author={Kyung-Wan YU, In-Bok YOM, Man-Seok UHM, Dong-Phil JANG, Jae-Hyun LEE, Seong-Pal LEE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Noise K-Band MMIC Receiver Module},
year={2000},
volume={E83-C},
number={5},
pages={750-754},
abstract={A 20 GHz-band GaAs MMIC receiver module has been developed using 0.15 µm HEMT technology process. It incorporates two front end low noise amplifiers, a double balanced diode mixer, and filters. The RF input frequency ranges 20.1 to 21 GHz and the IF output 1.1 to 2 GHz. Test results show an overall conversion gain of more than 27 dB, and less than a 2.2 dB noise figure. The image-rejection ratio greater than 21 dB has been obtained. The isolation between RF and IF ports is better than 27 dB, and between LO and IF is more than 50 dB.},
keywords={},
doi={},
ISSN={},
month={May},}
Salinan
TY - JOUR
TI - Low Noise K-Band MMIC Receiver Module
T2 - IEICE TRANSACTIONS on Electronics
SP - 750
EP - 754
AU - Kyung-Wan YU
AU - In-Bok YOM
AU - Man-Seok UHM
AU - Dong-Phil JANG
AU - Jae-Hyun LEE
AU - Seong-Pal LEE
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2000
AB - A 20 GHz-band GaAs MMIC receiver module has been developed using 0.15 µm HEMT technology process. It incorporates two front end low noise amplifiers, a double balanced diode mixer, and filters. The RF input frequency ranges 20.1 to 21 GHz and the IF output 1.1 to 2 GHz. Test results show an overall conversion gain of more than 27 dB, and less than a 2.2 dB noise figure. The image-rejection ratio greater than 21 dB has been obtained. The isolation between RF and IF ports is better than 27 dB, and between LO and IF is more than 50 dB.
ER -