The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Micropatterning monolayers dipasang sendiri organosilane (SAM) telah ditunjukkan berdasarkan fotolitografi menggunakan lampu excimer yang memancarkan cahaya vakum ultra-ungu (VUV) 172 nm dalam panjang gelombang. Litografi ini secara amnya boleh digunakan untuk corak mikro filem nipis organik termasuk alkil dan fluoroalkil SAM, kerana mekanisme coraknya melibatkan pembelahan ikatan CC dalam molekul organik dan penguraian molekul berikutnya. Dalam kajian ini, SAM telah disediakan pada substrat Si yang ditutup dengan oksida asli melalui pemendapan wap kimia di mana alkilsilane, iaitu, octadecyltrimethoxysilane [CH3(CH2)17Si(OCH3)3, ODS] atau fluoroalkylsilane, iaitu, 1H, 1H, 2H, 2H-perfluorodecyltrimethoxy-silane [CF3(CF2)7CH2CH2Si(OCH3)3, FAS] telah digunakan sebagai prekursor. Setiap SAM ini disinarikan foto melalui topeng foto yang diletakkan di permukaannya. Seperti yang disahkan oleh mikroskopi daya atom dan spektroskopi fotoelektron sinar-x, SAM telah terurai dan dikeluarkan di kawasan sinaran foto manakala kawasan bertopeng kekal tidak terurai. Satu mikrocorak lebar 2 µm telah berjaya dibuat. Tambahan pula, struktur mikro yang terdiri daripada dua SAM berbeza, iaitu, ODS dan FAS, telah direka seperti berikut. Sebagai contoh, ODS-SAM pertama kali dicorakkan oleh VUV-litografi. Oleh kerana, kawasan terdedah VUV pada ODS-SAM menunjukkan pertalian kepada kemisorpsi molekul organosilane, SAM kedua, iaitu FAS, terhad kepada corak yang ditakrifkan secara fotolitografi telah berjaya dibuat. Disebabkan oleh negatif elektron atom F, kawasan yang dilindungi FAS menunjukkan potensi permukaan yang lebih negatif daripada permukaan ODS: perbezaan potensinya adalah ca. 120 mV seperti yang diperhatikan oleh mikroskop daya kuar Kelvin.
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Salinan
Hiroyuki SUGIMURA, Atsushi HOZUMI, Osamu TAKAI, "Fabrication of Coplanar Microstructures Composed of Multiple Organosilane Self-Assembled Monolayers" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 7, pp. 1099-1103, July 2000, doi: .
Abstract: Micropatterning of organosilane self-assembled monolayers (SAMs) was demonstrated on the basis of photolithography using an excimer lamp radiating vacuum ultra-violet (VUV) light of 172 nm in wavelength. This lithography is generally applicable to micropatterning of organic thin films including alkyl and fluoroalkyl SAMs, since its patterning mechanism involves cleavage of C-C bonds in organic molecules and subsequent decomposition of the molecules. In this study, SAMs were prepared on Si substrates covered with native oxide by chemical vapor deposition in which an alkylsilane, that is, octadecyltrimethoxysilane [CH3(CH2)17Si(OCH3)3, ODS] or a fluoroalkylsilane, that is, 1H, 1H, 2H, 2H-perfluorodecyltrimethoxy-silane [CF3(CF2)7CH2CH2Si(OCH3)3, FAS] were used as precursors. Each of these SAMs was photoirradiated through a photomask placed on its surface. As confirmed by atomic force microscopy and x-ray photoelectron spectroscopy, the SAMs were decomposed and removed in the photoirradiated area while the masked areas remained undecomposed. A micropattern of 2 µm in width was successfully fabricated. Furthermore, microstructures composed of two different SAMs, that is, ODS and FAS, were fabricated as follows. For example, an ODS-SAM was first micropatterned by the VUV-lithography. Since, the VUV-exposed region on the ODS-SAM showed an affinity to the chemisorption of organosilane molecules, the second SAM, i. e. , FAS, confined to the photolithographically defined pattern was successfully fabricated. Due to the electron negativity of F atoms, the FAS covered region showed a more negative surface potential than that of the ODS surface: its potential difference was ca. 120 mV as observed by Kelvin probe force microscopy.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_7_1099/_p
Salinan
@ARTICLE{e83-c_7_1099,
author={Hiroyuki SUGIMURA, Atsushi HOZUMI, Osamu TAKAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fabrication of Coplanar Microstructures Composed of Multiple Organosilane Self-Assembled Monolayers},
year={2000},
volume={E83-C},
number={7},
pages={1099-1103},
abstract={Micropatterning of organosilane self-assembled monolayers (SAMs) was demonstrated on the basis of photolithography using an excimer lamp radiating vacuum ultra-violet (VUV) light of 172 nm in wavelength. This lithography is generally applicable to micropatterning of organic thin films including alkyl and fluoroalkyl SAMs, since its patterning mechanism involves cleavage of C-C bonds in organic molecules and subsequent decomposition of the molecules. In this study, SAMs were prepared on Si substrates covered with native oxide by chemical vapor deposition in which an alkylsilane, that is, octadecyltrimethoxysilane [CH3(CH2)17Si(OCH3)3, ODS] or a fluoroalkylsilane, that is, 1H, 1H, 2H, 2H-perfluorodecyltrimethoxy-silane [CF3(CF2)7CH2CH2Si(OCH3)3, FAS] were used as precursors. Each of these SAMs was photoirradiated through a photomask placed on its surface. As confirmed by atomic force microscopy and x-ray photoelectron spectroscopy, the SAMs were decomposed and removed in the photoirradiated area while the masked areas remained undecomposed. A micropattern of 2 µm in width was successfully fabricated. Furthermore, microstructures composed of two different SAMs, that is, ODS and FAS, were fabricated as follows. For example, an ODS-SAM was first micropatterned by the VUV-lithography. Since, the VUV-exposed region on the ODS-SAM showed an affinity to the chemisorption of organosilane molecules, the second SAM, i. e. , FAS, confined to the photolithographically defined pattern was successfully fabricated. Due to the electron negativity of F atoms, the FAS covered region showed a more negative surface potential than that of the ODS surface: its potential difference was ca. 120 mV as observed by Kelvin probe force microscopy.},
keywords={},
doi={},
ISSN={},
month={July},}
Salinan
TY - JOUR
TI - Fabrication of Coplanar Microstructures Composed of Multiple Organosilane Self-Assembled Monolayers
T2 - IEICE TRANSACTIONS on Electronics
SP - 1099
EP - 1103
AU - Hiroyuki SUGIMURA
AU - Atsushi HOZUMI
AU - Osamu TAKAI
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2000
AB - Micropatterning of organosilane self-assembled monolayers (SAMs) was demonstrated on the basis of photolithography using an excimer lamp radiating vacuum ultra-violet (VUV) light of 172 nm in wavelength. This lithography is generally applicable to micropatterning of organic thin films including alkyl and fluoroalkyl SAMs, since its patterning mechanism involves cleavage of C-C bonds in organic molecules and subsequent decomposition of the molecules. In this study, SAMs were prepared on Si substrates covered with native oxide by chemical vapor deposition in which an alkylsilane, that is, octadecyltrimethoxysilane [CH3(CH2)17Si(OCH3)3, ODS] or a fluoroalkylsilane, that is, 1H, 1H, 2H, 2H-perfluorodecyltrimethoxy-silane [CF3(CF2)7CH2CH2Si(OCH3)3, FAS] were used as precursors. Each of these SAMs was photoirradiated through a photomask placed on its surface. As confirmed by atomic force microscopy and x-ray photoelectron spectroscopy, the SAMs were decomposed and removed in the photoirradiated area while the masked areas remained undecomposed. A micropattern of 2 µm in width was successfully fabricated. Furthermore, microstructures composed of two different SAMs, that is, ODS and FAS, were fabricated as follows. For example, an ODS-SAM was first micropatterned by the VUV-lithography. Since, the VUV-exposed region on the ODS-SAM showed an affinity to the chemisorption of organosilane molecules, the second SAM, i. e. , FAS, confined to the photolithographically defined pattern was successfully fabricated. Due to the electron negativity of F atoms, the FAS covered region showed a more negative surface potential than that of the ODS surface: its potential difference was ca. 120 mV as observed by Kelvin probe force microscopy.
ER -