The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kami telah membuat struktur transistor aruhan statik dengan menggunakan filem phthalocyanine (CuPc) kuprum. Struktur lapisannya ialah Au(longkang)/CuPc/Al(gate)/CuPc/Au(sumber)/kaca. Arus saliran sumber dikawal oleh voltan pincang pintu Al apabila voltan longkang adalah positif tetapi hampir bebas daripadanya apabila voltan longkang negatif. Ciri-ciri voltan semasa dikawal oleh pengaliran terhad cas ruang yang bergantung pada perangkap cetek.
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Salinan
Shigekazu KUNIYOSHI, Masaaki IIZUKA, Kazuhiro KUDO, Kuniaki TANAKA, "Space-Charge Conduction in a Copper Phthalocyanine Static Induction Transistor" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 7, pp. 1111-1113, July 2000, doi: .
Abstract: We have fabricated a static induction transistor structure by using copper phthalocyanine (CuPc) films. Its layer-structure is Au(drain)/CuPc/Al(gate)/CuPc/Au(source)/glass. The source-drain current is controlled by the Al gate bias-voltage when the drain voltage is positive but is almost independent of it when the drain voltage is negative. The current-voltage characteristics are governed by the space-charge-limited conduction which depends on shallow traps.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_7_1111/_p
Salinan
@ARTICLE{e83-c_7_1111,
author={Shigekazu KUNIYOSHI, Masaaki IIZUKA, Kazuhiro KUDO, Kuniaki TANAKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Space-Charge Conduction in a Copper Phthalocyanine Static Induction Transistor},
year={2000},
volume={E83-C},
number={7},
pages={1111-1113},
abstract={We have fabricated a static induction transistor structure by using copper phthalocyanine (CuPc) films. Its layer-structure is Au(drain)/CuPc/Al(gate)/CuPc/Au(source)/glass. The source-drain current is controlled by the Al gate bias-voltage when the drain voltage is positive but is almost independent of it when the drain voltage is negative. The current-voltage characteristics are governed by the space-charge-limited conduction which depends on shallow traps.},
keywords={},
doi={},
ISSN={},
month={July},}
Salinan
TY - JOUR
TI - Space-Charge Conduction in a Copper Phthalocyanine Static Induction Transistor
T2 - IEICE TRANSACTIONS on Electronics
SP - 1111
EP - 1113
AU - Shigekazu KUNIYOSHI
AU - Masaaki IIZUKA
AU - Kazuhiro KUDO
AU - Kuniaki TANAKA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2000
AB - We have fabricated a static induction transistor structure by using copper phthalocyanine (CuPc) films. Its layer-structure is Au(drain)/CuPc/Al(gate)/CuPc/Au(source)/glass. The source-drain current is controlled by the Al gate bias-voltage when the drain voltage is positive but is almost independent of it when the drain voltage is negative. The current-voltage characteristics are governed by the space-charge-limited conduction which depends on shallow traps.
ER -