The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Pencemaran silikon akibat SiO2 disebabkan oleh penguraian wap silikon diiktiraf sebagai fenomena yang tidak diingini dalam aplikasi sentuhan elektrik. Kesan wap silikon yang terjerap pada permukaan sentuhan telah diperiksa dengan menggunakan sesentuh geganti mikro. Jumlah SiO2 dibentuk oleh penguraian wap silikon dijangka bergantung kepada jumlah wap silikon yang terjerap pada permukaan sentuhan. Oleh itu, pertama sekali, peningkatan dalam ketebalan filem daripada wap silikon terjerap sebagai fungsi masa pendedahan telah dijelaskan untuk keadaan statik permukaan. Ketebalan filem wap silikon terjerap meningkat mengikut kadar masa pendedahan dan tepu pada lapisan tunggal nipis. Selain itu, dalam tempoh pendedahan ini, ketebalan dipengaruhi oleh kepekatan wap silikon. Selepas ketebalan lapisan molekul tepu, ketebalan lapisan tidak dipengaruhi oleh kepekatan wap silikon. Seterusnya, daripada keputusan yang diperolehi melalui pemeriksaan pendedahan dalam keadaan statik, perkara berikut boleh disimpulkan. Molekul silikon menyerap dengan mudah pada permukaan sentuhan semasa tempoh pembukaan membuat dan memecahkan kenalan serta dalam keadaan statik. Memandangkan masa sesentuh dibuka menentukan masa pendedahan, jumlah molekul silikon terjerap bergantung pada kadar pensuisan (operasi sesaat). Kegagalan sentuhan akibat peningkatan rintangan sentuhan mungkin dipengaruhi oleh kadar pensuisan dalam persekitaran silikon. Sehubungan itu, ciri rintangan sentuhan telah diperiksa dalam pelbagai kadar pensuisan. Didapati bahawa bilangan operasi sehingga kegagalan sentuhan terjejas dengan ketara oleh kadar pensuisan. Iaitu, bilangan operasi sehingga kegagalan sentuhan berkurangan apabila kadar pensuisan meningkat. Walau bagaimanapun, apabila lapisan yang sangat nipis seperti monolayer telah terbentuk, ketebalan filem tidak lagi berkembang. Sehubungan itu, selepas lapisan yang sangat nipis terbentuk, kejadian kegagalan sentuhan tidak bergantung pada kepekatan silikon dan kadar pensuisan.
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Salinan
Terutaka TAMAI, "Adsorption of Silicone Vapor on the Contact Surface and Its Effect on Contact Failure of Micro Relays" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 9, pp. 1402-1408, September 2000, doi: .
Abstract: Silicone contamination due to SiO2 caused by decomposition of silicone vapor is recognized as an undesirable phenomenon in electrical contact applications. The effects of silicone vapor adsorbed on the contact surface were examined by using micro relay contacts. The amount of SiO2 formed by the decomposition of silicone vapor is expected to depend on the amount of silicone vapor adsorbed on the contact surface. Hence, first of all, an increase in the thickness of the film from the adsorbed silicone vapor as a function of exposure time was clarified for the static state of the surface. The thickness of the film of adsorbed silicone vapor increased in proportion to exposure time and saturated at a thin monolayer. Moreover, in this exposure period, the thickness was affected by the concentration of the silicone vapor. After the thickness of the molecular layer saturated, the thickness of the layer was not influenced by the concentration of the silicone vapor. Next, from these results obtained by examination of exposure in the static state, the following is deducible. The silicone molecule adsorbs easily on the contact surface during the opening period of making and breaking contacts as well as in the static state. As the time the contacts are open determines the exposure time, the amount of adsorbed silicone molecules depends on the switching rate (operation per second). Contact failure due to increases in contact resistance might be affected by the switching rate in a silicone environment. Accordingly, contact resistance characteristic was examined over a wide range of switching rates. It was found that number of operations up to contact failure was affected markedly by the switching rate. Namely, the number of operations up to contact failure decreases as the switching rate increases. However, once a very thin layer such as the monolayer has formed, the film thickness ceases to grow. Accordingly, after the very thin layer is formed, the occurrence of contact failure does not depend on the concentration of silicone and the switching rate.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_9_1402/_p
Salinan
@ARTICLE{e83-c_9_1402,
author={Terutaka TAMAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Adsorption of Silicone Vapor on the Contact Surface and Its Effect on Contact Failure of Micro Relays},
year={2000},
volume={E83-C},
number={9},
pages={1402-1408},
abstract={Silicone contamination due to SiO2 caused by decomposition of silicone vapor is recognized as an undesirable phenomenon in electrical contact applications. The effects of silicone vapor adsorbed on the contact surface were examined by using micro relay contacts. The amount of SiO2 formed by the decomposition of silicone vapor is expected to depend on the amount of silicone vapor adsorbed on the contact surface. Hence, first of all, an increase in the thickness of the film from the adsorbed silicone vapor as a function of exposure time was clarified for the static state of the surface. The thickness of the film of adsorbed silicone vapor increased in proportion to exposure time and saturated at a thin monolayer. Moreover, in this exposure period, the thickness was affected by the concentration of the silicone vapor. After the thickness of the molecular layer saturated, the thickness of the layer was not influenced by the concentration of the silicone vapor. Next, from these results obtained by examination of exposure in the static state, the following is deducible. The silicone molecule adsorbs easily on the contact surface during the opening period of making and breaking contacts as well as in the static state. As the time the contacts are open determines the exposure time, the amount of adsorbed silicone molecules depends on the switching rate (operation per second). Contact failure due to increases in contact resistance might be affected by the switching rate in a silicone environment. Accordingly, contact resistance characteristic was examined over a wide range of switching rates. It was found that number of operations up to contact failure was affected markedly by the switching rate. Namely, the number of operations up to contact failure decreases as the switching rate increases. However, once a very thin layer such as the monolayer has formed, the film thickness ceases to grow. Accordingly, after the very thin layer is formed, the occurrence of contact failure does not depend on the concentration of silicone and the switching rate.},
keywords={},
doi={},
ISSN={},
month={September},}
Salinan
TY - JOUR
TI - Adsorption of Silicone Vapor on the Contact Surface and Its Effect on Contact Failure of Micro Relays
T2 - IEICE TRANSACTIONS on Electronics
SP - 1402
EP - 1408
AU - Terutaka TAMAI
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2000
AB - Silicone contamination due to SiO2 caused by decomposition of silicone vapor is recognized as an undesirable phenomenon in electrical contact applications. The effects of silicone vapor adsorbed on the contact surface were examined by using micro relay contacts. The amount of SiO2 formed by the decomposition of silicone vapor is expected to depend on the amount of silicone vapor adsorbed on the contact surface. Hence, first of all, an increase in the thickness of the film from the adsorbed silicone vapor as a function of exposure time was clarified for the static state of the surface. The thickness of the film of adsorbed silicone vapor increased in proportion to exposure time and saturated at a thin monolayer. Moreover, in this exposure period, the thickness was affected by the concentration of the silicone vapor. After the thickness of the molecular layer saturated, the thickness of the layer was not influenced by the concentration of the silicone vapor. Next, from these results obtained by examination of exposure in the static state, the following is deducible. The silicone molecule adsorbs easily on the contact surface during the opening period of making and breaking contacts as well as in the static state. As the time the contacts are open determines the exposure time, the amount of adsorbed silicone molecules depends on the switching rate (operation per second). Contact failure due to increases in contact resistance might be affected by the switching rate in a silicone environment. Accordingly, contact resistance characteristic was examined over a wide range of switching rates. It was found that number of operations up to contact failure was affected markedly by the switching rate. Namely, the number of operations up to contact failure decreases as the switching rate increases. However, once a very thin layer such as the monolayer has formed, the film thickness ceases to grow. Accordingly, after the very thin layer is formed, the occurrence of contact failure does not depend on the concentration of silicone and the switching rate.
ER -