The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kami telah membangunkan transistor kesan medan saluran InGaP (FET) dengan voltan pecahan tinggi yang boleh dibuat dengan menggunakan proses fabrikasi GaAs FET konvensional. Lapisan penampan dan penghalang juga dioptimumkan untuk merealisasikan operasi voltan tinggi. FET saluran InGaP mempunyai voltan kerosakan parit-ke-sumber pada keadaan yang sangat tinggi melebihi 40 V, dan voltan pecahan get-ke-parit sebanyak 55 V. Ini membolehkan operasi isyarat besar voltan tinggi pada 40 V. Herotan intermodulasi urutan ketiga FET saluran InGaP adalah 10-20 dB lebih rendah daripada FET saluran GaAs yang setara, disebabkan oleh voltan operasi yang tinggi.
Naoki HARA
Yasuhiro NAKASHA
Toshihide KIKKAWA
Kazukiyo JOSHIN
Yuu WATANABE
Hitoshi TANAKA
Masahiko TAKIKAWA
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Salinan
Naoki HARA, Yasuhiro NAKASHA, Toshihide KIKKAWA, Kazukiyo JOSHIN, Yuu WATANABE, Hitoshi TANAKA, Masahiko TAKIKAWA, "InGaP-Channel Field Effect Transistors with High Breakdown Voltage" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1294-1299, October 2001, doi: .
Abstract: We have developed InGaP-channel field effect transistors (FETs) with high breakdown voltages that can be fabricated by using conventional GaAs FET fabrication processes. The buffer and barrier layers were also optimized for the realization of high-voltage operation. The InGaP-channel FET has an extremely high on-state drain-to-source breakdown voltage of over 40 V, and a gate-to-drain breakdown voltage of 55 V. This enabled high-voltage large-signal operation at 40 V. The third-order intermodulation distortion of the InGaP channel FETs was 10-20 dB lower than that of an equivalent GaAs-channel FET, due to the high operating voltage.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1294/_p
Salinan
@ARTICLE{e84-c_10_1294,
author={Naoki HARA, Yasuhiro NAKASHA, Toshihide KIKKAWA, Kazukiyo JOSHIN, Yuu WATANABE, Hitoshi TANAKA, Masahiko TAKIKAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={InGaP-Channel Field Effect Transistors with High Breakdown Voltage},
year={2001},
volume={E84-C},
number={10},
pages={1294-1299},
abstract={We have developed InGaP-channel field effect transistors (FETs) with high breakdown voltages that can be fabricated by using conventional GaAs FET fabrication processes. The buffer and barrier layers were also optimized for the realization of high-voltage operation. The InGaP-channel FET has an extremely high on-state drain-to-source breakdown voltage of over 40 V, and a gate-to-drain breakdown voltage of 55 V. This enabled high-voltage large-signal operation at 40 V. The third-order intermodulation distortion of the InGaP channel FETs was 10-20 dB lower than that of an equivalent GaAs-channel FET, due to the high operating voltage.},
keywords={},
doi={},
ISSN={},
month={October},}
Salinan
TY - JOUR
TI - InGaP-Channel Field Effect Transistors with High Breakdown Voltage
T2 - IEICE TRANSACTIONS on Electronics
SP - 1294
EP - 1299
AU - Naoki HARA
AU - Yasuhiro NAKASHA
AU - Toshihide KIKKAWA
AU - Kazukiyo JOSHIN
AU - Yuu WATANABE
AU - Hitoshi TANAKA
AU - Masahiko TAKIKAWA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - We have developed InGaP-channel field effect transistors (FETs) with high breakdown voltages that can be fabricated by using conventional GaAs FET fabrication processes. The buffer and barrier layers were also optimized for the realization of high-voltage operation. The InGaP-channel FET has an extremely high on-state drain-to-source breakdown voltage of over 40 V, and a gate-to-drain breakdown voltage of 55 V. This enabled high-voltage large-signal operation at 40 V. The third-order intermodulation distortion of the InGaP channel FETs was 10-20 dB lower than that of an equivalent GaAs-channel FET, due to the high operating voltage.
ER -