The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Bunyi frekuensi rendah HEMT pseudomorfik InGaAs yang dibuat pada substrat GaAs telah dikaji. Kebergantungan ketumpatan spektrum hingar pada voltan pintu menunjukkan bahawa saluran peranti mendominasi hingar frekuensi rendah. Bunyi penjanaan-rekombinasi (GR) diperhatikan dalam bentuk bonjolan yang ditindih pada latar belakang 1/f. Tenaga pengaktifan bunyi GR ialah 0.32-0.39 eV yang hampir dengan pusat DX, menunjukkan bahawa asal bunyi GR ialah pusat DX dalam lapisan penghalang AlGaAs. Bonjolan kecil diperhatikan dalam hingar arus pintu HEMT dengan pecahan mol InAs yang besar sebanyak 0.4 dan 0.5. Penjanaan perangkap dengan pemalar masa yang berbeza boleh menjelaskan tingkah laku ini.
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Salinan
Takashi MIZUTANI, Makoto YAMAMOTO, Shigeru KISHIMOTO, Koichi MAEZAWA, "Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1318-1322, October 2001, doi: .
Abstract: The low-frequency noise of InGaAs pseudomorphic HEMTs fabricated on GaAs substrate was studied. The dependence of the noise spectral density on the gate voltage indicates that the channel of the device dominates the low-frequency noise. Generation-recombination (G-R) noise was observed in the form of bulges superimposed on a background of 1/f. The activation energyof the G-R noise was 0.32-0.39 eV which is close to that of the DX center, suggesting that the origin of the G-R noise is the DX center in the AlGaAs barrier layer. Little bulge was observed in the gate current noise of the HEMTs with large InAs mole fractions of 0.4 and 0.5. Generation of the traps with different time constant can explain this behavior.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1318/_p
Salinan
@ARTICLE{e84-c_10_1318,
author={Takashi MIZUTANI, Makoto YAMAMOTO, Shigeru KISHIMOTO, Koichi MAEZAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs},
year={2001},
volume={E84-C},
number={10},
pages={1318-1322},
abstract={The low-frequency noise of InGaAs pseudomorphic HEMTs fabricated on GaAs substrate was studied. The dependence of the noise spectral density on the gate voltage indicates that the channel of the device dominates the low-frequency noise. Generation-recombination (G-R) noise was observed in the form of bulges superimposed on a background of 1/f. The activation energyof the G-R noise was 0.32-0.39 eV which is close to that of the DX center, suggesting that the origin of the G-R noise is the DX center in the AlGaAs barrier layer. Little bulge was observed in the gate current noise of the HEMTs with large InAs mole fractions of 0.4 and 0.5. Generation of the traps with different time constant can explain this behavior.},
keywords={},
doi={},
ISSN={},
month={October},}
Salinan
TY - JOUR
TI - Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1318
EP - 1322
AU - Takashi MIZUTANI
AU - Makoto YAMAMOTO
AU - Shigeru KISHIMOTO
AU - Koichi MAEZAWA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - The low-frequency noise of InGaAs pseudomorphic HEMTs fabricated on GaAs substrate was studied. The dependence of the noise spectral density on the gate voltage indicates that the channel of the device dominates the low-frequency noise. Generation-recombination (G-R) noise was observed in the form of bulges superimposed on a background of 1/f. The activation energyof the G-R noise was 0.32-0.39 eV which is close to that of the DX center, suggesting that the origin of the G-R noise is the DX center in the AlGaAs barrier layer. Little bulge was observed in the gate current noise of the HEMTs with large InAs mole fractions of 0.4 and 0.5. Generation of the traps with different time constant can explain this behavior.
ER -