The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Pengurangan arus longkang untuk transistor mobiliti elektron tinggi pseudomorphic InGaAs/AlGaAs (PHEMTs) telah diperhatikan disebabkan oleh kerosakan RIE yang disebabkan di bawah rantau pintu. Walau bagaimanapun, didapati bahawa arus longkang boleh dipulihkan selepas tegasan arus balik longkang pintu walaupun pada suhu bilik. Kadar pemulihan arus longkang sangat bergantung pada ketumpatan arus balik longkang pintu. Tenaga pengaktifan kadar pemulihan telah disahkan menurun daripada 0.531 eV kepada 0.119 eV di bawah tegasan arus songsang longkang pintu. Fenomena ini boleh difahami sebagai tindak balas kecacatan yang dipertingkatkan gabungan semula lubang yang dihasilkan oleh pecahan runtuhan salji. Penggabungan semula bukan sinaran lubang pada tahap kecacatan dipercayai dapat meningkatkan pemulihan kerosakan RIE.
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Salinan
Shinichi HOSHI, Takayuki IZUMI, Tomoyuki OHSHIMA, Masanori TSUNOTANI, Tamotsu KIMURA, "The Recovery Process of RIE-Damage in InGaAs/AlGaAs PHEMT Using Recombination Enhanced Defect Reaction" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1350-1355, October 2001, doi: .
Abstract: The reduction of the drain current for InGaAs/AlGaAs pseudomorphic high electron mobility transistors (PHEMTs) has been observed due to the RIE-damage induced under the gate region. However, it has been found that the drain current can be recovered after the gate-drain reverse current stress even at room temperature. The recovery rate of the drain current strongly depends on the gate-drain reverse current density. The activation energy of the recovery rate has been confirmed to decrease from 0.531 eV to 0.119 eV under the gate-drain reverse current stress. This phenomenon can be understood as a recombination enhanced defect reaction of holes generated by the avalanche breakdown. The non-radiative recombination of holes at the defect level is believed to enhance the recovery of the RIE-damage.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1350/_p
Salinan
@ARTICLE{e84-c_10_1350,
author={Shinichi HOSHI, Takayuki IZUMI, Tomoyuki OHSHIMA, Masanori TSUNOTANI, Tamotsu KIMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={The Recovery Process of RIE-Damage in InGaAs/AlGaAs PHEMT Using Recombination Enhanced Defect Reaction},
year={2001},
volume={E84-C},
number={10},
pages={1350-1355},
abstract={The reduction of the drain current for InGaAs/AlGaAs pseudomorphic high electron mobility transistors (PHEMTs) has been observed due to the RIE-damage induced under the gate region. However, it has been found that the drain current can be recovered after the gate-drain reverse current stress even at room temperature. The recovery rate of the drain current strongly depends on the gate-drain reverse current density. The activation energy of the recovery rate has been confirmed to decrease from 0.531 eV to 0.119 eV under the gate-drain reverse current stress. This phenomenon can be understood as a recombination enhanced defect reaction of holes generated by the avalanche breakdown. The non-radiative recombination of holes at the defect level is believed to enhance the recovery of the RIE-damage.},
keywords={},
doi={},
ISSN={},
month={October},}
Salinan
TY - JOUR
TI - The Recovery Process of RIE-Damage in InGaAs/AlGaAs PHEMT Using Recombination Enhanced Defect Reaction
T2 - IEICE TRANSACTIONS on Electronics
SP - 1350
EP - 1355
AU - Shinichi HOSHI
AU - Takayuki IZUMI
AU - Tomoyuki OHSHIMA
AU - Masanori TSUNOTANI
AU - Tamotsu KIMURA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - The reduction of the drain current for InGaAs/AlGaAs pseudomorphic high electron mobility transistors (PHEMTs) has been observed due to the RIE-damage induced under the gate region. However, it has been found that the drain current can be recovered after the gate-drain reverse current stress even at room temperature. The recovery rate of the drain current strongly depends on the gate-drain reverse current density. The activation energy of the recovery rate has been confirmed to decrease from 0.531 eV to 0.119 eV under the gate-drain reverse current stress. This phenomenon can be understood as a recombination enhanced defect reaction of holes generated by the avalanche breakdown. The non-radiative recombination of holes at the defect level is believed to enhance the recovery of the RIE-damage.
ER -