The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Ciri-ciri voltan semasa HBT berasaskan InP dengan pemancar komposit InAlAs-InP telah diukur sebagai fungsi ketebalan lapisan InP dalam pemancar. Oleh kerana ketebalan berbeza-beza, ciri-ciri seperti keuntungan dan faktor idealiti berbeza-beza secara kualitatif seperti yang dijangkakan daripada perubahan dalam kedudukan penghalang InAlAs dalam pemancar. Walau bagaimanapun, secara kuantitatif, variasi menunjukkan bahawa antara muka berbeza secara sistematik dengan ketebalan InP, menjadi lebih mendadak untuk pemancar dengan lapisan InP yang lebih tebal.
William Ross McKINNON
Rachid DRIAD
Craig STOREY
Anthony RENAUD
Sean P. McALISTER
Ted GARANZOTIS
Anthony J. SPRINGTHORPE
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Salinan
William Ross McKINNON, Rachid DRIAD, Craig STOREY, Anthony RENAUD, Sean P. McALISTER, Ted GARANZOTIS, Anthony J. SPRINGTHORPE, "Emitter Interface in InP-Based HBTs with InAlAs/InP Composite Emitters" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1373-1378, October 2001, doi: .
Abstract: The current-voltage characteristics of InP-based HBTs with InAlAs-InP composite emitters have been measured as a function of the thickness of the InP layer in the emitter. As the thickness varies, characteristics such as the gain and the ideality factor vary qualitatively as expected from the changes in position of the InAlAs barrier in the emitter. Quantitatively, however, the variations indicate that the interfaces vary systematically with InP thickness, becoming more abrupt for emitters with thicker InP layers.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1373/_p
Salinan
@ARTICLE{e84-c_10_1373,
author={William Ross McKINNON, Rachid DRIAD, Craig STOREY, Anthony RENAUD, Sean P. McALISTER, Ted GARANZOTIS, Anthony J. SPRINGTHORPE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Emitter Interface in InP-Based HBTs with InAlAs/InP Composite Emitters},
year={2001},
volume={E84-C},
number={10},
pages={1373-1378},
abstract={The current-voltage characteristics of InP-based HBTs with InAlAs-InP composite emitters have been measured as a function of the thickness of the InP layer in the emitter. As the thickness varies, characteristics such as the gain and the ideality factor vary qualitatively as expected from the changes in position of the InAlAs barrier in the emitter. Quantitatively, however, the variations indicate that the interfaces vary systematically with InP thickness, becoming more abrupt for emitters with thicker InP layers.},
keywords={},
doi={},
ISSN={},
month={October},}
Salinan
TY - JOUR
TI - Emitter Interface in InP-Based HBTs with InAlAs/InP Composite Emitters
T2 - IEICE TRANSACTIONS on Electronics
SP - 1373
EP - 1378
AU - William Ross McKINNON
AU - Rachid DRIAD
AU - Craig STOREY
AU - Anthony RENAUD
AU - Sean P. McALISTER
AU - Ted GARANZOTIS
AU - Anthony J. SPRINGTHORPE
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - The current-voltage characteristics of InP-based HBTs with InAlAs-InP composite emitters have been measured as a function of the thickness of the InP layer in the emitter. As the thickness varies, characteristics such as the gain and the ideality factor vary qualitatively as expected from the changes in position of the InAlAs barrier in the emitter. Quantitatively, however, the variations indicate that the interfaces vary systematically with InP thickness, becoming more abrupt for emitters with thicker InP layers.
ER -