The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kami telah membangunkan SOI n- dan p-MOSFET termaju dengan saluran-Si tegang pada struktur penebat (strained-SOI) yang direka oleh teknologi SIMOX (separation-by-implanted-oxygen). Ciri-ciri substrat SOI tegang ini dan sifat elektrik MOSFET SOI tegang telah dikaji secara eksperimen. Menggunakan teknologi epitaksi-Si/relaxed-SiGe epitaxy dan proses SIMOX biasa, kami telah berjaya membentuk struktur berlapis bagi filem SiGe yang tegang sepenuhnya (20 nm)/lemi SiGe yang santai sepenuhnya (290 nm) pada lapisan oksida terkubur seragam (85 nm) di dalam lapisan SiGe. Ciri-ciri arus longkang yang baik telah diperolehi dalam MOSFET SOI tegang. Didapati bahawa mobiliti elektron dan lubang dipertingkatkan dalam MOSFET SOI tegang, berbanding dengan mobiliti universal dalam lapisan penyongsangan dan mobiliti kawalan SOI MOSFET. Faktor peningkatan mobiliti ini hampir sama dengan keputusan teori.
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Salinan
Tomohisa MIZUNO, Naoharu SUGIYAMA, Atsushi KUROBE, Shin-ichi TAKAGI, "Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1423-1430, October 2001, doi: .
Abstract: We have developed advanced SOI n- and p-MOSFETs with strained-Si channel on insulator (strained-SOI) structure fabricated by SIMOX (separation-by-implanted-oxygen) technology. The characteristics of this strained-SOI substrate and electrical properties of strained-SOI MOSFET's have been experimentally studied. Using strained-Si/relaxed-SiGe epitaxy technology and usual SIMOX process, we have successfully formed the layered structure of fully-strained-Si (20 nm)/fully-relaxed-SiGe film (290 nm) on uniform buried oxide layer (85 nm) inside SiGe layer. Good drain current characteristics have been obtained in strained-SOI MOSFET's. It is found that both electron and hole mobility is enhanced in strained-SOI MOSFET's, compared to the universal mobility in an inversion layer and the mobility of control SOI MOSFET's. These mobility enhancement factors are almost the same as the theoretical results.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1423/_p
Salinan
@ARTICLE{e84-c_10_1423,
author={Tomohisa MIZUNO, Naoharu SUGIYAMA, Atsushi KUROBE, Shin-ichi TAKAGI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures},
year={2001},
volume={E84-C},
number={10},
pages={1423-1430},
abstract={We have developed advanced SOI n- and p-MOSFETs with strained-Si channel on insulator (strained-SOI) structure fabricated by SIMOX (separation-by-implanted-oxygen) technology. The characteristics of this strained-SOI substrate and electrical properties of strained-SOI MOSFET's have been experimentally studied. Using strained-Si/relaxed-SiGe epitaxy technology and usual SIMOX process, we have successfully formed the layered structure of fully-strained-Si (20 nm)/fully-relaxed-SiGe film (290 nm) on uniform buried oxide layer (85 nm) inside SiGe layer. Good drain current characteristics have been obtained in strained-SOI MOSFET's. It is found that both electron and hole mobility is enhanced in strained-SOI MOSFET's, compared to the universal mobility in an inversion layer and the mobility of control SOI MOSFET's. These mobility enhancement factors are almost the same as the theoretical results.},
keywords={},
doi={},
ISSN={},
month={October},}
Salinan
TY - JOUR
TI - Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures
T2 - IEICE TRANSACTIONS on Electronics
SP - 1423
EP - 1430
AU - Tomohisa MIZUNO
AU - Naoharu SUGIYAMA
AU - Atsushi KUROBE
AU - Shin-ichi TAKAGI
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - We have developed advanced SOI n- and p-MOSFETs with strained-Si channel on insulator (strained-SOI) structure fabricated by SIMOX (separation-by-implanted-oxygen) technology. The characteristics of this strained-SOI substrate and electrical properties of strained-SOI MOSFET's have been experimentally studied. Using strained-Si/relaxed-SiGe epitaxy technology and usual SIMOX process, we have successfully formed the layered structure of fully-strained-Si (20 nm)/fully-relaxed-SiGe film (290 nm) on uniform buried oxide layer (85 nm) inside SiGe layer. Good drain current characteristics have been obtained in strained-SOI MOSFET's. It is found that both electron and hole mobility is enhanced in strained-SOI MOSFET's, compared to the universal mobility in an inversion layer and the mobility of control SOI MOSFET's. These mobility enhancement factors are almost the same as the theoretical results.
ER -