The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Sputtering reaktif sasaran logam dalam nyahcas magnetron planar DC menunjukkan peralihan mod drastik antara mod logam dan oksida. Untuk menerangkan keputusan eksperimen secara kuantitatif, model sputtering reaktif baharu termasuk pekali pelepasan elektron sekunder bagi sasaran telah dibangunkan. Model ini berdasarkan model imbangan gas reaktif ringkas yang dicadangkan oleh Berg et al., dan boleh menerangkan secara kuantitatif keputusan eksperimen seperti pergantungan kadar aliran oksigen bagi kadar pemendapan dan pelepasan, diperhatikan untuk pemendapan sputter MgO.
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Salinan
Yoshinobu MATSUDA, Kei TASHIRO, Koji OTOMO, Hiroshi FUJIYAMA, "New Reactive Sputtering Model Considering the Effect of the Electron Emission Coefficiency for MgO Deposition" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 11, pp. 1667-1672, November 2001, doi: .
Abstract: Reactive sputtering of a metallic target in DC planar magnetron discharge shows a drastic mode transition between metallic and oxide modes. To describe the experimental results quantitatively, a new reactive sputtering model including the secondary electron emission coefficient of a target has been developed. The model is based on a simple reactive gas balance model proposed by Berg et al., and can quantitatively describe experimental results such as the oxygen flow rate dependence of deposition rate and discharge, observed for MgO sputter-deposition.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_11_1667/_p
Salinan
@ARTICLE{e84-c_11_1667,
author={Yoshinobu MATSUDA, Kei TASHIRO, Koji OTOMO, Hiroshi FUJIYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={New Reactive Sputtering Model Considering the Effect of the Electron Emission Coefficiency for MgO Deposition},
year={2001},
volume={E84-C},
number={11},
pages={1667-1672},
abstract={Reactive sputtering of a metallic target in DC planar magnetron discharge shows a drastic mode transition between metallic and oxide modes. To describe the experimental results quantitatively, a new reactive sputtering model including the secondary electron emission coefficient of a target has been developed. The model is based on a simple reactive gas balance model proposed by Berg et al., and can quantitatively describe experimental results such as the oxygen flow rate dependence of deposition rate and discharge, observed for MgO sputter-deposition.},
keywords={},
doi={},
ISSN={},
month={November},}
Salinan
TY - JOUR
TI - New Reactive Sputtering Model Considering the Effect of the Electron Emission Coefficiency for MgO Deposition
T2 - IEICE TRANSACTIONS on Electronics
SP - 1667
EP - 1672
AU - Yoshinobu MATSUDA
AU - Kei TASHIRO
AU - Koji OTOMO
AU - Hiroshi FUJIYAMA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2001
AB - Reactive sputtering of a metallic target in DC planar magnetron discharge shows a drastic mode transition between metallic and oxide modes. To describe the experimental results quantitatively, a new reactive sputtering model including the secondary electron emission coefficient of a target has been developed. The model is based on a simple reactive gas balance model proposed by Berg et al., and can quantitatively describe experimental results such as the oxygen flow rate dependence of deposition rate and discharge, observed for MgO sputter-deposition.
ER -