The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kertas ini menerangkan pembungkusan peringkat wafer, tiga dimensi untuk MEMS di mana penderia, penggerak, litar elektronik dan fungsi lain digabungkan bersama dalam satu blok bersepadu. Wafer Si dengan fungsi MEMS terbina dalam telah disepadukan tanpa perubahan dalam ketebalan untuk memastikan kekuatan mekanikal dan meningkatkan pelesapan haba. Dalam keseluruhan proses penyepaduan tiga dimensi, wafer Si telah diproses pada suhu di bawah 400
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Salinan
Akinobu SATOH, "Interconnection of Stacked Layers by Bumpless Wiring in Wafer-Level Three-Dimensional Device" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 12, pp. 1746-1755, December 2001, doi: .
Abstract: This paper describes the wafer-level, three-dimensional packaging for MEMS in which sensors, actuators, electronic circuits and other functions are combined together in one integrated block. Si wafers with built-in MEMS functions were integrated with no change in thickness to ensure mechanical strength and improve heat dissipation. In the entire process of three-dimensional integration, Si wafers were processed at temperatures below 400
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_12_1746/_p
Salinan
@ARTICLE{e84-c_12_1746,
author={Akinobu SATOH, },
journal={IEICE TRANSACTIONS on Electronics},
title={Interconnection of Stacked Layers by Bumpless Wiring in Wafer-Level Three-Dimensional Device},
year={2001},
volume={E84-C},
number={12},
pages={1746-1755},
abstract={This paper describes the wafer-level, three-dimensional packaging for MEMS in which sensors, actuators, electronic circuits and other functions are combined together in one integrated block. Si wafers with built-in MEMS functions were integrated with no change in thickness to ensure mechanical strength and improve heat dissipation. In the entire process of three-dimensional integration, Si wafers were processed at temperatures below 400
keywords={},
doi={},
ISSN={},
month={December},}
Salinan
TY - JOUR
TI - Interconnection of Stacked Layers by Bumpless Wiring in Wafer-Level Three-Dimensional Device
T2 - IEICE TRANSACTIONS on Electronics
SP - 1746
EP - 1755
AU - Akinobu SATOH
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2001
AB - This paper describes the wafer-level, three-dimensional packaging for MEMS in which sensors, actuators, electronic circuits and other functions are combined together in one integrated block. Si wafers with built-in MEMS functions were integrated with no change in thickness to ensure mechanical strength and improve heat dissipation. In the entire process of three-dimensional integration, Si wafers were processed at temperatures below 400
ER -