The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kertas kerja ini menerangkan reka bentuk dan hasil penderia suhu tempatan dan jarak jauh CMOS bersepadu kos rendah dengan output digital. Tiada pemangkasan diperlukan untuk mendapatkan kelinearan suhu yang baik, supaya hanya penentukuran satu suhu diperlukan yang sangat mengurangkan kos ujian. Voltan pemancar asas transistor bipolar substrat parasit digunakan untuk mengukur suhu tempatan. Transistor bipolar luaran yang disambungkan diod digunakan untuk mengukur suhu jauh. Teknik pencincang digunakan untuk membatalkan voltan mengimbangi op-amp, supaya voltan celah jalur yang tepat boleh diperolehi tanpa pemangkasan rintangan. Pesanan pertama ΣΔ ADC digunakan untuk menghasilkan output digital. Penderia suhu tempatan dan jauh direalisasikan dalam teknologi CMOS tiga poli logam tunggal poli tunggal 0.6 µm dengan kawasan aktif 0.6 mm2 dan 0.65 mm2, masing-masing. Selepas penentukuran, ralatnya ialah
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Salinan
Ming-Chan WENG, Jiin-Chuan WU, "Low Cost CMOS On-Chip and Remote Temperature Sensors" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 4, pp. 451-459, April 2001, doi: .
Abstract: This paper describes the design and results of low cost integrated CMOS local and remote temperature sensors with digital outputs. No trimming is needed to obtain good temperature linearity, so that only one-temperature calibration is needed which greatly reduces testing cost. The base-emitter voltage of the parasitic substrate bipolar transistor is used to measure the local temperature. A diode-connected external bipolar transistor is used to measure the remote temperature. Chopper techniques were used to cancel the offset voltage of the op-amp, so that a precise bandgap voltage can be obtained without resistance trimming. A first order ΣΔ ADC was used to produce the digital output. The local and remote temperature sensors were realized in a 0.6 µm single-poly triple-metal CMOS technology with active area of 0.6 mm2 and 0.65 mm2, respectively. After calibration, the error is
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_4_451/_p
Salinan
@ARTICLE{e84-c_4_451,
author={Ming-Chan WENG, Jiin-Chuan WU, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Cost CMOS On-Chip and Remote Temperature Sensors},
year={2001},
volume={E84-C},
number={4},
pages={451-459},
abstract={This paper describes the design and results of low cost integrated CMOS local and remote temperature sensors with digital outputs. No trimming is needed to obtain good temperature linearity, so that only one-temperature calibration is needed which greatly reduces testing cost. The base-emitter voltage of the parasitic substrate bipolar transistor is used to measure the local temperature. A diode-connected external bipolar transistor is used to measure the remote temperature. Chopper techniques were used to cancel the offset voltage of the op-amp, so that a precise bandgap voltage can be obtained without resistance trimming. A first order ΣΔ ADC was used to produce the digital output. The local and remote temperature sensors were realized in a 0.6 µm single-poly triple-metal CMOS technology with active area of 0.6 mm2 and 0.65 mm2, respectively. After calibration, the error is
keywords={},
doi={},
ISSN={},
month={April},}
Salinan
TY - JOUR
TI - Low Cost CMOS On-Chip and Remote Temperature Sensors
T2 - IEICE TRANSACTIONS on Electronics
SP - 451
EP - 459
AU - Ming-Chan WENG
AU - Jiin-Chuan WU
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2001
AB - This paper describes the design and results of low cost integrated CMOS local and remote temperature sensors with digital outputs. No trimming is needed to obtain good temperature linearity, so that only one-temperature calibration is needed which greatly reduces testing cost. The base-emitter voltage of the parasitic substrate bipolar transistor is used to measure the local temperature. A diode-connected external bipolar transistor is used to measure the remote temperature. Chopper techniques were used to cancel the offset voltage of the op-amp, so that a precise bandgap voltage can be obtained without resistance trimming. A first order ΣΔ ADC was used to produce the digital output. The local and remote temperature sensors were realized in a 0.6 µm single-poly triple-metal CMOS technology with active area of 0.6 mm2 and 0.65 mm2, respectively. After calibration, the error is
ER -