The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Epitaxial SrTiO3(STO) filem pada epitaxial (Ti,Al)N/Si(100) telah berjaya diperolehi menggunakan lapisan Ti-buffer. SrTiO3 filem adalah (100) berorientasikan dan berkembang dalam hubungan epitaxial selari (kubus-pada-kubus), iaitu, (100) SrTiO3//(100)(Ti,Al)N//(100)Si, <110> SrTiO3//<110> (Ti,Al)N//<110> Si. Lapisan Ti-buffer telah ditanam pada (Ti, Al) N oleh magnetron sputtering, dan ketebalan lapisan penampan adalah 2-10 nm. Selepas filem STO terpercik, lapisan Ti-buffer ditukar kepada polycrystalline anatase-TiO2.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Salinan
Kenya SANO, Ryoichi OHARA, Takashi KAWAKUBO, "Growth of Epitaxial SrTiO3 on Epitaxial (Ti,Al)N/Si(100) Substrate Using Ti-Buffer Layer" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 6, pp. 808-813, June 2001, doi: .
Abstract: Epitaxial SrTiO3(STO) film on epitaxial (Ti,Al)N/Si(100) was successfully obtained using a Ti-buffer layer. The SrTiO3 film was (100) oriented and grew in parallel epitaxial relationship (cube-on-cube), i.e., (100)SrTiO3//(100)(Ti,Al)N//(100)Si, <110> SrTiO3//<110> (Ti,Al)N//<110> Si. The Ti-buffer layer was grown on (Ti,Al)N by magnetron sputtering, and the thickness of the buffer layer was 2-10 nm. After the STO film was sputtered, the Ti-buffer layer was changed to polycrystalline anatase-TiO2.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_6_808/_p
Salinan
@ARTICLE{e84-c_6_808,
author={Kenya SANO, Ryoichi OHARA, Takashi KAWAKUBO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Growth of Epitaxial SrTiO3 on Epitaxial (Ti,Al)N/Si(100) Substrate Using Ti-Buffer Layer},
year={2001},
volume={E84-C},
number={6},
pages={808-813},
abstract={Epitaxial SrTiO3(STO) film on epitaxial (Ti,Al)N/Si(100) was successfully obtained using a Ti-buffer layer. The SrTiO3 film was (100) oriented and grew in parallel epitaxial relationship (cube-on-cube), i.e., (100)SrTiO3//(100)(Ti,Al)N//(100)Si, <110> SrTiO3//<110> (Ti,Al)N//<110> Si. The Ti-buffer layer was grown on (Ti,Al)N by magnetron sputtering, and the thickness of the buffer layer was 2-10 nm. After the STO film was sputtered, the Ti-buffer layer was changed to polycrystalline anatase-TiO2.},
keywords={},
doi={},
ISSN={},
month={June},}
Salinan
TY - JOUR
TI - Growth of Epitaxial SrTiO3 on Epitaxial (Ti,Al)N/Si(100) Substrate Using Ti-Buffer Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 808
EP - 813
AU - Kenya SANO
AU - Ryoichi OHARA
AU - Takashi KAWAKUBO
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2001
AB - Epitaxial SrTiO3(STO) film on epitaxial (Ti,Al)N/Si(100) was successfully obtained using a Ti-buffer layer. The SrTiO3 film was (100) oriented and grew in parallel epitaxial relationship (cube-on-cube), i.e., (100)SrTiO3//(100)(Ti,Al)N//(100)Si, <110> SrTiO3//<110> (Ti,Al)N//<110> Si. The Ti-buffer layer was grown on (Ti,Al)N by magnetron sputtering, and the thickness of the buffer layer was 2-10 nm. After the STO film was sputtered, the Ti-buffer layer was changed to polycrystalline anatase-TiO2.
ER -