The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kertas kerja ini mencadangkan LDMOSFET (MOSFET Resapan Berganda Lateral) yang mempunyai keteguhan terhadap keperluan ESD (Nyahcas Elektrostatik) yang paling sukar untuk ECU kereta (Unit Kawalan Elektronik) yang menyahcas 25 kV 150 pF melalui 150 ohm 1 µH tanpa litar pelindung luaran. Idea asas untuk mencapai ini adalah untuk menambah litar nyahcas baru pada LDMOSFET, yang dihidupkan apabila Model Badan Manusia (HBM) jenis ESD digunakan dan untuk menggunakan tenaga nyahcas dalam SOA (Kawasan Operasi Selamat) dalam LDMOSFET, mengelakkan kesesakan arus setempat transistor bipolar parasit yang menyebabkan kegagalan peranti ESD konvensional. Pertama, dinamik kesesakan semasa apabila LDMOSFET gerbang dibumikan terdedah kepada tegasan ESD diterangkan melalui simulasi SPICE tahap litar pada model peranti teragih selari. Kemudian LDMOSFET menghidupkan ESD baru dengan MOSFET nyahcas dicadangkan, yang mempunyai keteguhan ESD sebanyak 25 kV. Akhirnya ukuran ESD peranti baharu ditunjukkan mengikut anggaran yang baik dan memenuhi sasaran.
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Salinan
Kazunori KAWAMOTO, Kenji KOHNO, Yasushi HIGUCHI, Seiji FUJINO, Isao SHIRAKAWA, "A 25 kV ESD Proof LDMOSFET with a Turn-on Discharge MOSFET" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 6, pp. 823-831, June 2001, doi: .
Abstract: This paper proposes an LDMOSFET (Lateral Double-diffused MOSFET) that has the robustness against the hardest ESD (Electrostatic Discharge) requirement for automobile ECUs (Electronic Control Units) of discharging 25 kV 150 pF through 150 ohm 1 µH without external protecting circuits. The basic idea to achieve this is to add a novel discharge circuit to an LDMOSFET, which turns on when Human Body Model (HBM) type ESD is applied, and to consume the discharge energy in SOA (Safe Operating Area) in the LDMOSFET, avoiding localized current crowding of a parasitic bipolar transistor which causes the conventional ESD device failure. First, dynamics of current crowding when a grounded gate LDMOSFET is exposed to ESD stress is described by means of a circuit level SPICE simulation on a parallel distributed device model. Then a novel ESD turn-on LDMOSFET with a discharge MOSFET is proposed, which has ESD robustness of 25 kV. Finally the ESD measurements of the new device are shown to be in good accordance with estimation and to satisfy the target.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_6_823/_p
Salinan
@ARTICLE{e84-c_6_823,
author={Kazunori KAWAMOTO, Kenji KOHNO, Yasushi HIGUCHI, Seiji FUJINO, Isao SHIRAKAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 25 kV ESD Proof LDMOSFET with a Turn-on Discharge MOSFET},
year={2001},
volume={E84-C},
number={6},
pages={823-831},
abstract={This paper proposes an LDMOSFET (Lateral Double-diffused MOSFET) that has the robustness against the hardest ESD (Electrostatic Discharge) requirement for automobile ECUs (Electronic Control Units) of discharging 25 kV 150 pF through 150 ohm 1 µH without external protecting circuits. The basic idea to achieve this is to add a novel discharge circuit to an LDMOSFET, which turns on when Human Body Model (HBM) type ESD is applied, and to consume the discharge energy in SOA (Safe Operating Area) in the LDMOSFET, avoiding localized current crowding of a parasitic bipolar transistor which causes the conventional ESD device failure. First, dynamics of current crowding when a grounded gate LDMOSFET is exposed to ESD stress is described by means of a circuit level SPICE simulation on a parallel distributed device model. Then a novel ESD turn-on LDMOSFET with a discharge MOSFET is proposed, which has ESD robustness of 25 kV. Finally the ESD measurements of the new device are shown to be in good accordance with estimation and to satisfy the target.},
keywords={},
doi={},
ISSN={},
month={June},}
Salinan
TY - JOUR
TI - A 25 kV ESD Proof LDMOSFET with a Turn-on Discharge MOSFET
T2 - IEICE TRANSACTIONS on Electronics
SP - 823
EP - 831
AU - Kazunori KAWAMOTO
AU - Kenji KOHNO
AU - Yasushi HIGUCHI
AU - Seiji FUJINO
AU - Isao SHIRAKAWA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2001
AB - This paper proposes an LDMOSFET (Lateral Double-diffused MOSFET) that has the robustness against the hardest ESD (Electrostatic Discharge) requirement for automobile ECUs (Electronic Control Units) of discharging 25 kV 150 pF through 150 ohm 1 µH without external protecting circuits. The basic idea to achieve this is to add a novel discharge circuit to an LDMOSFET, which turns on when Human Body Model (HBM) type ESD is applied, and to consume the discharge energy in SOA (Safe Operating Area) in the LDMOSFET, avoiding localized current crowding of a parasitic bipolar transistor which causes the conventional ESD device failure. First, dynamics of current crowding when a grounded gate LDMOSFET is exposed to ESD stress is described by means of a circuit level SPICE simulation on a parallel distributed device model. Then a novel ESD turn-on LDMOSFET with a discharge MOSFET is proposed, which has ESD robustness of 25 kV. Finally the ESD measurements of the new device are shown to be in good accordance with estimation and to satisfy the target.
ER -