The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Cakera jenis Magnetoplumbite Ba ferit (BaM) disediakan pada lapisan bawah Pt dan Pt-Ta menggunakan radas sputtering sasaran. Lapisan bawah Pt lebih berkesan daripada lapisan bawah ZnO untuk menggalakkan orientasi paksi c lapisan BaM, terutamanya untuk filem BaM yang sangat nipis. Lapisan bawah Pt-Ta digunakan untuk mengurangkan saiz butiran lapisan BaM. Cakera BaM/Pt-Ta didedahkan lebih besar S/N nisbah daripada cakera BaM/Pt kerana output isyaratnya yang lebih besar dan tahap hingar media yang lebih rendah. Cakera BaM dengan lapisan BaM tebal 50 nm mendedahkan tahap hingar yang lebih rendah dan lebih besar S/N nisbah daripada itu dengan lapisan BaM tebal 100 nm kerana saiz butiran yang lebih kecil.
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Salinan
Shigeki NAKAGAWA, Nobuhiko FUNABASHI, Jie FENG, Masahiko NAOE, "Fabrication and Recording Characteristics of Sputter-Deposited Ba-Ferrite Thin Films Deposited on Pt-Ta Underlayers for Perpendicular Magnetic Recording Media" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 9, pp. 1137-1141, September 2001, doi: .
Abstract: Magnetoplumbite type Ba ferrite (BaM) disks were prepared on Pt and Pt-Ta underlayers using facing targets sputtering apparatus. Pt underlayers are more effective than ZnO underlayers to promote c-axis orientation of BaM layers, especially for extremely thin BaM films. Pt-Ta underlayer was used to decrease the grain size of BaM layers. BaM/Pt-Ta disks revealed larger S/N ratio than BaM/Pt disks because of their larger signal output and lower media noise level. BaM disks with 50 nm thick BaM layers revealed lower noise level and larger S/N ratio than that with 100 nm thick BaM layers due to smaller grain size.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_9_1137/_p
Salinan
@ARTICLE{e84-c_9_1137,
author={Shigeki NAKAGAWA, Nobuhiko FUNABASHI, Jie FENG, Masahiko NAOE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Fabrication and Recording Characteristics of Sputter-Deposited Ba-Ferrite Thin Films Deposited on Pt-Ta Underlayers for Perpendicular Magnetic Recording Media},
year={2001},
volume={E84-C},
number={9},
pages={1137-1141},
abstract={Magnetoplumbite type Ba ferrite (BaM) disks were prepared on Pt and Pt-Ta underlayers using facing targets sputtering apparatus. Pt underlayers are more effective than ZnO underlayers to promote c-axis orientation of BaM layers, especially for extremely thin BaM films. Pt-Ta underlayer was used to decrease the grain size of BaM layers. BaM/Pt-Ta disks revealed larger S/N ratio than BaM/Pt disks because of their larger signal output and lower media noise level. BaM disks with 50 nm thick BaM layers revealed lower noise level and larger S/N ratio than that with 100 nm thick BaM layers due to smaller grain size.},
keywords={},
doi={},
ISSN={},
month={September},}
Salinan
TY - JOUR
TI - Fabrication and Recording Characteristics of Sputter-Deposited Ba-Ferrite Thin Films Deposited on Pt-Ta Underlayers for Perpendicular Magnetic Recording Media
T2 - IEICE TRANSACTIONS on Electronics
SP - 1137
EP - 1141
AU - Shigeki NAKAGAWA
AU - Nobuhiko FUNABASHI
AU - Jie FENG
AU - Masahiko NAOE
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2001
AB - Magnetoplumbite type Ba ferrite (BaM) disks were prepared on Pt and Pt-Ta underlayers using facing targets sputtering apparatus. Pt underlayers are more effective than ZnO underlayers to promote c-axis orientation of BaM layers, especially for extremely thin BaM films. Pt-Ta underlayer was used to decrease the grain size of BaM layers. BaM/Pt-Ta disks revealed larger S/N ratio than BaM/Pt disks because of their larger signal output and lower media noise level. BaM disks with 50 nm thick BaM layers revealed lower noise level and larger S/N ratio than that with 100 nm thick BaM layers due to smaller grain size.
ER -