The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kami mencadangkan model berkesan yang boleh menghasilkan semula kesan saluran pendek terbalik (RSCE) voltan ambang (Vth) MOSFET menggunakan simulator proses konvensional yang menyelesaikan satu persamaan untuk setiap kekotoran. Model yang dicadangkan dibangunkan untuk pemodelan tempatan yang berkesan dalam keadaan proses yang terhad. Model yang dicadangkan melibatkan fizik di mana RSCE disebabkan oleh timbunan dopan saluran pada Si/SiO2 antara muka. Kami juga melaporkan aplikasi kepada reka bentuk peranti sebenar menggunakan model kami. Kos pengiraan adalah jauh lebih rendah daripada model penyebaran pasangan, dan reka bentuk peranti dalam masa pusingan yang boleh diterima adalah mungkin.
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Salinan
Hirokazu HAYASHI, Noriyuki MIURA, Hirotaka KOMATSUBARA, Koichi FUKUDA, "A Simplified Process Modeling for Reverse Short Channel Effect of Threshold Voltage of MOSFET" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 9, pp. 1234-1239, September 2001, doi: .
Abstract: We propose an effective model that can reproduce the reverse short channel effect (RSCE) of the threshold voltage (Vth) of MOSFETs using a conventional process simulator that solves one equation for each impurity. The proposed model is developed for local modeling which is effective within the limited process conditions. The proposed model involves the physics in which RSCE is due to the pile up of channel dopant at the Si/SiO2 interface. We also report the application to actual device design using our model. The calculation cost is much lower than for a pair diffusion model, and device design in an acceptable turn around time is possible.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_9_1234/_p
Salinan
@ARTICLE{e84-c_9_1234,
author={Hirokazu HAYASHI, Noriyuki MIURA, Hirotaka KOMATSUBARA, Koichi FUKUDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Simplified Process Modeling for Reverse Short Channel Effect of Threshold Voltage of MOSFET},
year={2001},
volume={E84-C},
number={9},
pages={1234-1239},
abstract={We propose an effective model that can reproduce the reverse short channel effect (RSCE) of the threshold voltage (Vth) of MOSFETs using a conventional process simulator that solves one equation for each impurity. The proposed model is developed for local modeling which is effective within the limited process conditions. The proposed model involves the physics in which RSCE is due to the pile up of channel dopant at the Si/SiO2 interface. We also report the application to actual device design using our model. The calculation cost is much lower than for a pair diffusion model, and device design in an acceptable turn around time is possible.},
keywords={},
doi={},
ISSN={},
month={September},}
Salinan
TY - JOUR
TI - A Simplified Process Modeling for Reverse Short Channel Effect of Threshold Voltage of MOSFET
T2 - IEICE TRANSACTIONS on Electronics
SP - 1234
EP - 1239
AU - Hirokazu HAYASHI
AU - Noriyuki MIURA
AU - Hirotaka KOMATSUBARA
AU - Koichi FUKUDA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2001
AB - We propose an effective model that can reproduce the reverse short channel effect (RSCE) of the threshold voltage (Vth) of MOSFETs using a conventional process simulator that solves one equation for each impurity. The proposed model is developed for local modeling which is effective within the limited process conditions. The proposed model involves the physics in which RSCE is due to the pile up of channel dopant at the Si/SiO2 interface. We also report the application to actual device design using our model. The calculation cost is much lower than for a pair diffusion model, and device design in an acceptable turn around time is possible.
ER -