The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Peranti electroluminescent filem nipis (TFEL) telah dibangunkan baru menggunakan Y2Geo5 filem nipis fosforus oksida yang disediakan oleh rf magnetron sputtering. Pelepasan pelbagai warna diperhatikan dalam peranti TFEL yang direka menggunakan pelbagai Y yang diaktifkan oleh kekotoran2Geo5 filem nipis fosforus. Peranti TFEL bercahaya tinggi telah direka menggunakan Y2Geo5:Mn filem nipis disediakan dengan kandungan Mn sebanyak 2 pada.% dan selepas disepuh pada 1020
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Salinan
Tadatsugu MINAMI, Youhei KOBAYASHI, Toshihiro MIYATA, Masashi YAMAZAKI, "High-Luminance EL Devices Using Y2GeO5 Phosphor Thin Films Prepared by Magnetron Sputtering" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 11, pp. 1905-1910, November 2002, doi: .
Abstract: Thin-film electroluminescent (TFEL) devices have been newly developed using Y2GeO5 oxide phosphor thin films prepared by r.f. magnetron sputtering. Multicolor emissions were observed in TFEL devices fabricated using various impurity-activated Y2GeO5 phosphor thin films. A high-luminance TFEL device was fabricated using a Y2GeO5:Mn thin film prepared with a Mn content of 2 at.% and postannealed at 1020
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_11_1905/_p
Salinan
@ARTICLE{e85-c_11_1905,
author={Tadatsugu MINAMI, Youhei KOBAYASHI, Toshihiro MIYATA, Masashi YAMAZAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Luminance EL Devices Using Y2GeO5 Phosphor Thin Films Prepared by Magnetron Sputtering},
year={2002},
volume={E85-C},
number={11},
pages={1905-1910},
abstract={Thin-film electroluminescent (TFEL) devices have been newly developed using Y2GeO5 oxide phosphor thin films prepared by r.f. magnetron sputtering. Multicolor emissions were observed in TFEL devices fabricated using various impurity-activated Y2GeO5 phosphor thin films. A high-luminance TFEL device was fabricated using a Y2GeO5:Mn thin film prepared with a Mn content of 2 at.% and postannealed at 1020
keywords={},
doi={},
ISSN={},
month={November},}
Salinan
TY - JOUR
TI - High-Luminance EL Devices Using Y2GeO5 Phosphor Thin Films Prepared by Magnetron Sputtering
T2 - IEICE TRANSACTIONS on Electronics
SP - 1905
EP - 1910
AU - Tadatsugu MINAMI
AU - Youhei KOBAYASHI
AU - Toshihiro MIYATA
AU - Masashi YAMAZAKI
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2002
AB - Thin-film electroluminescent (TFEL) devices have been newly developed using Y2GeO5 oxide phosphor thin films prepared by r.f. magnetron sputtering. Multicolor emissions were observed in TFEL devices fabricated using various impurity-activated Y2GeO5 phosphor thin films. A high-luminance TFEL device was fabricated using a Y2GeO5:Mn thin film prepared with a Mn content of 2 at.% and postannealed at 1020
ER -