The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Untuk mereka bentuk pengayun dan suis ciri hingar fasa adalah kunci untuk mendapatkan spektrum frekuensi berkualiti tinggi. Oleh kerana hingar fasa dipengaruhi secara langsung oleh hingar 1/f transistor dalam litar, pengukuran dan pemodelan hingar 1/f adalah penting. Kertas ini menerangkan ukuran hingar 1/f, model hingar kelipan bergantung kepada kekerapan dan bias, dan kaedah pengekstrakan parameter hingar MOSFET. Juga, untuk kebergantungan geometri MOSFET bagi bunyi 1/f arus longkang dianalisis dan dimodelkan. Model ini telah disahkan dengan mengukur ketumpatan spektrum arus hingar MOSFET dalam dua peranti proses yang berbeza.
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Salinan
Hitoshi AOKI, "Bias and Geometry Dependent Flicker Noise Characterization for n-MOSFET's" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 2, pp. 408-414, February 2002, doi: .
Abstract: In order to design oscillators and switches phase noise characteristic is the key to obtain high quality frequency spectrums. Since the phase noise is directly affected by the 1/f noise of transistors in the circuit, 1/f noise measurement and modeling are important. This paper describes 1/f noise measurement, frequency and bias dependent flicker noise model, and noise parameter extraction method of MOSFET's. Also, for MOSFET's geometry dependencies of drain current 1/f noise are analyzed and modeled. The model has been verified by measuring the noise current spectral density of MOSFET's in two different process devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_2_408/_p
Salinan
@ARTICLE{e85-c_2_408,
author={Hitoshi AOKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Bias and Geometry Dependent Flicker Noise Characterization for n-MOSFET's},
year={2002},
volume={E85-C},
number={2},
pages={408-414},
abstract={In order to design oscillators and switches phase noise characteristic is the key to obtain high quality frequency spectrums. Since the phase noise is directly affected by the 1/f noise of transistors in the circuit, 1/f noise measurement and modeling are important. This paper describes 1/f noise measurement, frequency and bias dependent flicker noise model, and noise parameter extraction method of MOSFET's. Also, for MOSFET's geometry dependencies of drain current 1/f noise are analyzed and modeled. The model has been verified by measuring the noise current spectral density of MOSFET's in two different process devices.},
keywords={},
doi={},
ISSN={},
month={February},}
Salinan
TY - JOUR
TI - Bias and Geometry Dependent Flicker Noise Characterization for n-MOSFET's
T2 - IEICE TRANSACTIONS on Electronics
SP - 408
EP - 414
AU - Hitoshi AOKI
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2002
AB - In order to design oscillators and switches phase noise characteristic is the key to obtain high quality frequency spectrums. Since the phase noise is directly affected by the 1/f noise of transistors in the circuit, 1/f noise measurement and modeling are important. This paper describes 1/f noise measurement, frequency and bias dependent flicker noise model, and noise parameter extraction method of MOSFET's. Also, for MOSFET's geometry dependencies of drain current 1/f noise are analyzed and modeled. The model has been verified by measuring the noise current spectral density of MOSFET's in two different process devices.
ER -