The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
SQUID (Superconducting Quantum Interference Device) Pengimbasan foto ialah teknik analitik yang bertujuan untuk penilaian bukan invasif wafer semikonduktor dan struktur peranti. Kaedah ini adalah berdasarkan pengesanan medan magnet arus foto yang teraruh tempatan dalam sampel yang disiasat oleh pancaran laser terfokus. Medan magnet dipantau menggunakan magnetometer SQUID yang sensitif semasa mengimbas permukaan sampel dengan pancaran laser. Ketidakhomogenan doping dalam silikon gred elektronik, sempadan butiran dalam silikon suria, dan kecacatan dalam struktur peranti fotovoltaik telah dianalisis.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Salinan
Thomas SCHURIG, Jorn BEYER, Dietmar DRUNG, Frank LUDWIG, Anke LUDGE, Helge RIEMANN, "NDE of Semiconductor Samples and Photovoltaic Devices with High Spatial Resolution Utilizing SQUID Photoscanning" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 3, pp. 665-669, March 2002, doi: .
Abstract: SQUID (Superconducting QUantum Interference Device) Photoscanning is an analytical technique intended for the noninvasive evaluation of semiconductor wafers and device structures. This method is based on the detection of the magnetic field of photocurrents locally induced in the sample under investigation by a focused laser beam. The magnetic field is monitored by means of a sensitive SQUID magnetometer while scanning the sample surface with the laser beam. Doping inhomogeneities in electronic grade silicon, grain boundaries in solar silicon, and defects in photovoltaic device structures have been analyzed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_3_665/_p
Salinan
@ARTICLE{e85-c_3_665,
author={Thomas SCHURIG, Jorn BEYER, Dietmar DRUNG, Frank LUDWIG, Anke LUDGE, Helge RIEMANN, },
journal={IEICE TRANSACTIONS on Electronics},
title={NDE of Semiconductor Samples and Photovoltaic Devices with High Spatial Resolution Utilizing SQUID Photoscanning},
year={2002},
volume={E85-C},
number={3},
pages={665-669},
abstract={SQUID (Superconducting QUantum Interference Device) Photoscanning is an analytical technique intended for the noninvasive evaluation of semiconductor wafers and device structures. This method is based on the detection of the magnetic field of photocurrents locally induced in the sample under investigation by a focused laser beam. The magnetic field is monitored by means of a sensitive SQUID magnetometer while scanning the sample surface with the laser beam. Doping inhomogeneities in electronic grade silicon, grain boundaries in solar silicon, and defects in photovoltaic device structures have been analyzed.},
keywords={},
doi={},
ISSN={},
month={March},}
Salinan
TY - JOUR
TI - NDE of Semiconductor Samples and Photovoltaic Devices with High Spatial Resolution Utilizing SQUID Photoscanning
T2 - IEICE TRANSACTIONS on Electronics
SP - 665
EP - 669
AU - Thomas SCHURIG
AU - Jorn BEYER
AU - Dietmar DRUNG
AU - Frank LUDWIG
AU - Anke LUDGE
AU - Helge RIEMANN
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2002
AB - SQUID (Superconducting QUantum Interference Device) Photoscanning is an analytical technique intended for the noninvasive evaluation of semiconductor wafers and device structures. This method is based on the detection of the magnetic field of photocurrents locally induced in the sample under investigation by a focused laser beam. The magnetic field is monitored by means of a sensitive SQUID magnetometer while scanning the sample surface with the laser beam. Doping inhomogeneities in electronic grade silicon, grain boundaries in solar silicon, and defects in photovoltaic device structures have been analyzed.
ER -