The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Dalam makalah ini, kami menyemak kemajuan dalam persimpangan BiSrCaCuO-2212 Intrinsic Josephson (IJJs) dengan meringkaskan keputusan terbaru kami dalam fabrikasi dan eksperimen frekuensi tinggi. Dengan menggunakan proses fabrikasi dua sisi, bilangan simpang Josephson intrinsik yang jelas dalam geometri yang jelas boleh dibuat. Persimpangan dalam tindanan adalah agak homogen, dan pengagihan kuasa penyinaran luaran di antara persimpangan adalah sekata. Langkah Shapiro diperhatikan dengan jelas sehingga 2.5 THz, dan keadaan umum untuk berlakunya langkah Shapiro pada kekerapan frf ialah ia sepatutnya lebih besar daripada kekerapan plasma fpl. Di bawah keadaan tertentu, langkah Shapiro adalah persilangan sifar, menjadikan beberapa aplikasi mungkin, seperti standard voltan kuantum dsb.
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Salinan
Huabing WANG, Jian CHEN, Lixing YOU, Peiheng WU, Tsutomu YAMASHITA, "Intrinsic Josephson Junctions in BiSrCaCuO-2212: Recent Progress" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 3, pp. 691-695, March 2002, doi: .
Abstract: In this paper, we review the progress in BiSrCaCuO-2212 Intrinsic Josephson junctions (IJJs) by summarizing our recent results in fabrication and high frequency experiments. Using a double-side fabrication process, a well defined number of intrinsic Josephson junctions in a well defined geometry can be fabricated. The junctions in the stack are quite homogeneous, and the power distribution of external irradiation among the junctions is even. Shapiro steps are clearly observed up to 2.5 THz, and the general condition for the occurrence of Shapiro steps at frequency frf is that it should be much greater than the plasma frequency fpl. Under certain conditions the Shapiro steps are zero-crossing, making some applications possible, such as quantum voltage standard etc.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_3_691/_p
Salinan
@ARTICLE{e85-c_3_691,
author={Huabing WANG, Jian CHEN, Lixing YOU, Peiheng WU, Tsutomu YAMASHITA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Intrinsic Josephson Junctions in BiSrCaCuO-2212: Recent Progress},
year={2002},
volume={E85-C},
number={3},
pages={691-695},
abstract={In this paper, we review the progress in BiSrCaCuO-2212 Intrinsic Josephson junctions (IJJs) by summarizing our recent results in fabrication and high frequency experiments. Using a double-side fabrication process, a well defined number of intrinsic Josephson junctions in a well defined geometry can be fabricated. The junctions in the stack are quite homogeneous, and the power distribution of external irradiation among the junctions is even. Shapiro steps are clearly observed up to 2.5 THz, and the general condition for the occurrence of Shapiro steps at frequency frf is that it should be much greater than the plasma frequency fpl. Under certain conditions the Shapiro steps are zero-crossing, making some applications possible, such as quantum voltage standard etc.},
keywords={},
doi={},
ISSN={},
month={March},}
Salinan
TY - JOUR
TI - Intrinsic Josephson Junctions in BiSrCaCuO-2212: Recent Progress
T2 - IEICE TRANSACTIONS on Electronics
SP - 691
EP - 695
AU - Huabing WANG
AU - Jian CHEN
AU - Lixing YOU
AU - Peiheng WU
AU - Tsutomu YAMASHITA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2002
AB - In this paper, we review the progress in BiSrCaCuO-2212 Intrinsic Josephson junctions (IJJs) by summarizing our recent results in fabrication and high frequency experiments. Using a double-side fabrication process, a well defined number of intrinsic Josephson junctions in a well defined geometry can be fabricated. The junctions in the stack are quite homogeneous, and the power distribution of external irradiation among the junctions is even. Shapiro steps are clearly observed up to 2.5 THz, and the general condition for the occurrence of Shapiro steps at frequency frf is that it should be much greater than the plasma frequency fpl. Under certain conditions the Shapiro steps are zero-crossing, making some applications possible, such as quantum voltage standard etc.
ER -