The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kertas kerja ini menangani cabaran asas dan penyelesaian yang mungkin dalam mereka bentuk dan membuat transistor CMOS skala nanometer. Komponen teknologi penting seperti dielektrik get termaju, simpang ultra cetek, kejuruteraan profil dopan saluran dan salisida dibincangkan. Transistor berskala ultra dengan panjang get fizikal hingga 15 nm ditunjukkan sebagai usaha berterusan untuk menolak teknologi CMOS planar tradisional ke arah had fizikalnya.
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Salinan
Bin YU, "CMOS Transistor in Nanoscale Era" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 5, pp. 1052-1056, May 2002, doi: .
Abstract: This paper addresses the fundamental challenges and possible solutions in designing and fabricating nanometer-scale CMOS transistor. Essential technology components such as advanced gate dielectrics, ultra-shallow junction, channel dopant profile engineering, and salicide are discussed. Ultra-scaled transistor with physical gate length down to 15 nm is demonstrated as a continued effort to push the traditional planar CMOS technology towards its physical limit.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_5_1052/_p
Salinan
@ARTICLE{e85-c_5_1052,
author={Bin YU, },
journal={IEICE TRANSACTIONS on Electronics},
title={CMOS Transistor in Nanoscale Era},
year={2002},
volume={E85-C},
number={5},
pages={1052-1056},
abstract={This paper addresses the fundamental challenges and possible solutions in designing and fabricating nanometer-scale CMOS transistor. Essential technology components such as advanced gate dielectrics, ultra-shallow junction, channel dopant profile engineering, and salicide are discussed. Ultra-scaled transistor with physical gate length down to 15 nm is demonstrated as a continued effort to push the traditional planar CMOS technology towards its physical limit.},
keywords={},
doi={},
ISSN={},
month={May},}
Salinan
TY - JOUR
TI - CMOS Transistor in Nanoscale Era
T2 - IEICE TRANSACTIONS on Electronics
SP - 1052
EP - 1056
AU - Bin YU
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2002
AB - This paper addresses the fundamental challenges and possible solutions in designing and fabricating nanometer-scale CMOS transistor. Essential technology components such as advanced gate dielectrics, ultra-shallow junction, channel dopant profile engineering, and salicide are discussed. Ultra-scaled transistor with physical gate length down to 15 nm is demonstrated as a continued effort to push the traditional planar CMOS technology towards its physical limit.
ER -