The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Analisis interkoneksi yang tepat amat diperlukan untuk penyepaduan skala giga yang kekerapan operasinya melebihi 10 GHz. Dalam kajian ini, analisis terperinci dan tepat bagi sambung sepaksi dan sambung segi empat tepat sebenar telah dilakukan dengan penilaian langsung persamaan Maxwell dan kaedah unsur terhingga, masing-masing. Telah didedahkan bahawa terdapat dua mod perambatan untuk sambung LSI: mod perambatan terhad kedalaman kulit dan mod gelombang perlahan akibat interkoneksi. Dalam interkoneksi kecil, mod perambatan ialah mod gelombang perlahan teraruh antara sambungan; oleh itu, kita tidak boleh mendapatkan perambatan kelajuan cahaya disebabkan oleh kesan yang disebabkan oleh saling sambung. Untuk mengatasi had kelajuan ini atau untuk meningkatkan integriti isyarat, adalah penting untuk memperkenalkan sambung pendek untuk struktur kecil, dan sambung yang jauh lebih besar daripada kedalaman kulit. Kami mencadangkan satu sambungan terpencil gas sebagai calon untukk struktur untuk meningkatkan kelajuan perambatan isyarat. Dengan pengenalan struktur sedemikian, prestasi peranti kecil dalam kawasan submikron dalam akan dipertingkatkan dengan berkesan.
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Salinan
Akihiro MORIMOTO, Koji KOTANI, Kazushi TAKAHASHI, Shigetoshi SUGAWA, Tadahiro OHMI, "Analysis of High-Speed Signal Behavior in a Miniaturized Interconnect" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 5, pp. 1111-1118, May 2002, doi: .
Abstract: Precise interconnect analysis is strongly required for giga-scale integration the operation frequency of which is excess 10 GHz. In this study, detailed and accurate analyses of a coaxial interconnect and an actual rectangular interconnect have been performed by the direct evaluation of Maxwell's equations and the finite element method, respectively. It has been revealed that there are two propagation modes for LSI interconnects: skin depth limited propagation mode and interconnect induced slow wave mode. In a miniaturized interconnect, the propagation mode is the interconnect induced slow wave mode; therefore, we cannot obtain the light-speed propagation due to such an interconnect-induced effect. In order to overcome this speed limitation or to improve signal integrity, it is essential to introduce a short interconnect for a miniaturized structure, and a much larger interconnect than the skin depth. We propose a gas-isolated interconnect as a candidate for an ultimately low-k structure in order to increase the signal-propagation speed. By the introduction of such structures, the performance of miniaturized devices in the deep submicron region will be effectively enhanced.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_5_1111/_p
Salinan
@ARTICLE{e85-c_5_1111,
author={Akihiro MORIMOTO, Koji KOTANI, Kazushi TAKAHASHI, Shigetoshi SUGAWA, Tadahiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analysis of High-Speed Signal Behavior in a Miniaturized Interconnect},
year={2002},
volume={E85-C},
number={5},
pages={1111-1118},
abstract={Precise interconnect analysis is strongly required for giga-scale integration the operation frequency of which is excess 10 GHz. In this study, detailed and accurate analyses of a coaxial interconnect and an actual rectangular interconnect have been performed by the direct evaluation of Maxwell's equations and the finite element method, respectively. It has been revealed that there are two propagation modes for LSI interconnects: skin depth limited propagation mode and interconnect induced slow wave mode. In a miniaturized interconnect, the propagation mode is the interconnect induced slow wave mode; therefore, we cannot obtain the light-speed propagation due to such an interconnect-induced effect. In order to overcome this speed limitation or to improve signal integrity, it is essential to introduce a short interconnect for a miniaturized structure, and a much larger interconnect than the skin depth. We propose a gas-isolated interconnect as a candidate for an ultimately low-k structure in order to increase the signal-propagation speed. By the introduction of such structures, the performance of miniaturized devices in the deep submicron region will be effectively enhanced.},
keywords={},
doi={},
ISSN={},
month={May},}
Salinan
TY - JOUR
TI - Analysis of High-Speed Signal Behavior in a Miniaturized Interconnect
T2 - IEICE TRANSACTIONS on Electronics
SP - 1111
EP - 1118
AU - Akihiro MORIMOTO
AU - Koji KOTANI
AU - Kazushi TAKAHASHI
AU - Shigetoshi SUGAWA
AU - Tadahiro OHMI
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2002
AB - Precise interconnect analysis is strongly required for giga-scale integration the operation frequency of which is excess 10 GHz. In this study, detailed and accurate analyses of a coaxial interconnect and an actual rectangular interconnect have been performed by the direct evaluation of Maxwell's equations and the finite element method, respectively. It has been revealed that there are two propagation modes for LSI interconnects: skin depth limited propagation mode and interconnect induced slow wave mode. In a miniaturized interconnect, the propagation mode is the interconnect induced slow wave mode; therefore, we cannot obtain the light-speed propagation due to such an interconnect-induced effect. In order to overcome this speed limitation or to improve signal integrity, it is essential to introduce a short interconnect for a miniaturized structure, and a much larger interconnect than the skin depth. We propose a gas-isolated interconnect as a candidate for an ultimately low-k structure in order to increase the signal-propagation speed. By the introduction of such structures, the performance of miniaturized devices in the deep submicron region will be effectively enhanced.
ER -