The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Diod pemancar cahaya organik (OLED) yang mengandungi lapisan penimbal katod berstruktur nano telah dibuat, dan sifat elektrik dan pemancarnya telah disiasat. OLED mempunyai struktur anod ITO/CuPc/TPD/Alq3/lapisan penampan/Katod Al dengan lapisan penimbal diperbuat daripada lapisan berselang-seli berstruktur nano Alq3 dan Al. Voltan pemacu dan kecekapan peranti telah dipertingkatkan dengan memasukkan lapisan penampan. Dianggarkan bahawa beberapa modulasi penghalang Schottky pada Alq3 dan antara muka katod Al disebabkan oleh pemasukan lapisan penampan dan ia menyebabkan peningkatan suntikan elektron daripada katod Al.
Kazunari SHINBO
Eigo SAKAI
Futao KANEKO
Keizo KATO
Takahiro KAWAKAMI
Toyoyasu TADOKORO
Shinichi OHTA
Rigoberto C. ADVINCULA
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Salinan
Kazunari SHINBO, Eigo SAKAI, Futao KANEKO, Keizo KATO, Takahiro KAWAKAMI, Toyoyasu TADOKORO, Shinichi OHTA, Rigoberto C. ADVINCULA, "Electrical and Emitting Properties of Organic Electroluminescent Diodes with Nanostructured Cathode Buffer-Layers of Al/Alq3 Ultrathin Films" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 6, pp. 1233-1238, June 2002, doi: .
Abstract: Organic light emitting diodes (OLEDs) containing nanostructured cathode buffer layers were fabricated, and their electrical and emitting properties were investigated. The OLEDs have an ITO anode/CuPc/TPD/Alq3/buffer layer/Al cathode structure with the buffer layers made from nanostructured alternating layers Alq3 and Al. The driving voltage and the efficiency of the devices were improved by insertion of the buffer layer. It was estimated that some modulations of the Schottky barrier at the Alq3 and the Al cathode interface were induced due to the insertion of the buffer layer and it caused an enhancement of electron injection from the Al cathode.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_6_1233/_p
Salinan
@ARTICLE{e85-c_6_1233,
author={Kazunari SHINBO, Eigo SAKAI, Futao KANEKO, Keizo KATO, Takahiro KAWAKAMI, Toyoyasu TADOKORO, Shinichi OHTA, Rigoberto C. ADVINCULA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Electrical and Emitting Properties of Organic Electroluminescent Diodes with Nanostructured Cathode Buffer-Layers of Al/Alq3 Ultrathin Films},
year={2002},
volume={E85-C},
number={6},
pages={1233-1238},
abstract={Organic light emitting diodes (OLEDs) containing nanostructured cathode buffer layers were fabricated, and their electrical and emitting properties were investigated. The OLEDs have an ITO anode/CuPc/TPD/Alq3/buffer layer/Al cathode structure with the buffer layers made from nanostructured alternating layers Alq3 and Al. The driving voltage and the efficiency of the devices were improved by insertion of the buffer layer. It was estimated that some modulations of the Schottky barrier at the Alq3 and the Al cathode interface were induced due to the insertion of the buffer layer and it caused an enhancement of electron injection from the Al cathode.},
keywords={},
doi={},
ISSN={},
month={June},}
Salinan
TY - JOUR
TI - Electrical and Emitting Properties of Organic Electroluminescent Diodes with Nanostructured Cathode Buffer-Layers of Al/Alq3 Ultrathin Films
T2 - IEICE TRANSACTIONS on Electronics
SP - 1233
EP - 1238
AU - Kazunari SHINBO
AU - Eigo SAKAI
AU - Futao KANEKO
AU - Keizo KATO
AU - Takahiro KAWAKAMI
AU - Toyoyasu TADOKORO
AU - Shinichi OHTA
AU - Rigoberto C. ADVINCULA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2002
AB - Organic light emitting diodes (OLEDs) containing nanostructured cathode buffer layers were fabricated, and their electrical and emitting properties were investigated. The OLEDs have an ITO anode/CuPc/TPD/Alq3/buffer layer/Al cathode structure with the buffer layers made from nanostructured alternating layers Alq3 and Al. The driving voltage and the efficiency of the devices were improved by insertion of the buffer layer. It was estimated that some modulations of the Schottky barrier at the Alq3 and the Al cathode interface were induced due to the insertion of the buffer layer and it caused an enhancement of electron injection from the Al cathode.
ER -