The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kertas ini menerangkan IC transponder CMOS untuk aplikasi RFID. Penerus gelombang penuh yang dilaksanakan menggunakan transistor NMOS membekalkan transponder dengan voltan bekalan dc. ROM 64-bit telah direka bentuk untuk memori data. Modulasi impedans hadapan dan pengekodan Manchester digunakan untuk menghantar data daripada memori transponder kepada pembaca. Litar redaman baru telah dicadangkan dan digunakan untuk modulasi impedans. Litar yang direka bentuk telah direka menggunakan proses CMOS 0.65-poli, 2-logam 2 µm. Keputusan pengukuran menunjukkan bahawa ia mempunyai kadar redaman malar sekitar 20-25% dan kadar penghantaran data 3.9 kbps pada pembawa RF 125 kHz. Kawasan mati ialah 0.9 mm
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Salinan
Won-Seok OH, Jong-Tae PARK, Chong-Gun YU, "A CMOS Transponder IC Using a New Damping Circuit" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 6, pp. 1351-1355, June 2002, doi: .
Abstract: This paper describes a CMOS transponder IC for RFID applications. A full-wave rectifier implemented using NMOS transistors supplies the transponder with a dc supply voltage. A 64-bit ROM has been designed for a data memory. Front-end impedance modulation and Manchester coding are used for transmitting the data from the transponder memory to the reader. A new damping circuit has been proposed and employed for impedance modulation. The designed circuit has been fabricated using a 0.65 µm 2-poly, 2-metal CMOS process. Measurement results show that it has a constant damping rate of around 20-25% and a data transmission rate of 3.9 kbps at a 125 kHz RF carrier. Die area is 0.9 mm
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_6_1351/_p
Salinan
@ARTICLE{e85-c_6_1351,
author={Won-Seok OH, Jong-Tae PARK, Chong-Gun YU, },
journal={IEICE TRANSACTIONS on Electronics},
title={A CMOS Transponder IC Using a New Damping Circuit},
year={2002},
volume={E85-C},
number={6},
pages={1351-1355},
abstract={This paper describes a CMOS transponder IC for RFID applications. A full-wave rectifier implemented using NMOS transistors supplies the transponder with a dc supply voltage. A 64-bit ROM has been designed for a data memory. Front-end impedance modulation and Manchester coding are used for transmitting the data from the transponder memory to the reader. A new damping circuit has been proposed and employed for impedance modulation. The designed circuit has been fabricated using a 0.65 µm 2-poly, 2-metal CMOS process. Measurement results show that it has a constant damping rate of around 20-25% and a data transmission rate of 3.9 kbps at a 125 kHz RF carrier. Die area is 0.9 mm
keywords={},
doi={},
ISSN={},
month={June},}
Salinan
TY - JOUR
TI - A CMOS Transponder IC Using a New Damping Circuit
T2 - IEICE TRANSACTIONS on Electronics
SP - 1351
EP - 1355
AU - Won-Seok OH
AU - Jong-Tae PARK
AU - Chong-Gun YU
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2002
AB - This paper describes a CMOS transponder IC for RFID applications. A full-wave rectifier implemented using NMOS transistors supplies the transponder with a dc supply voltage. A 64-bit ROM has been designed for a data memory. Front-end impedance modulation and Manchester coding are used for transmitting the data from the transponder memory to the reader. A new damping circuit has been proposed and employed for impedance modulation. The designed circuit has been fabricated using a 0.65 µm 2-poly, 2-metal CMOS process. Measurement results show that it has a constant damping rate of around 20-25% and a data transmission rate of 3.9 kbps at a 125 kHz RF carrier. Die area is 0.9 mm
ER -