The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Model anggaran tenaga kuasa DRAM (eDRAM) terbenam dicadangkan untuk aplikasi sistem pada cip (SOC). Ciri utama ialah model analisis berasaskan ayunan isyarat (SSBA), yang meningkatkan ketepatan model tenaga kuasa SRAM konvensional. Anggaran kuasa-tenaga menggunakan model SSBA menunjukkan ketepatan 95% berbanding simulasi kuasa tahap transistor untuk tiga eDRAM yang direka. Model SSBA digabungkan dengan simulator peringkat tinggi menyediakan anggaran tenaga-tenaga tahap sistem yang pantas dan tepat bagi eDRAM.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Salinan
Yong-Ha PARK, Jeonghoon KOOK, Hoi-Jun YOO, "Embedded DRAM (eDRAM) Power-Energy Estimation Using Signal Swing-Based Analytical Model" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 8, pp. 1664-1668, August 2002, doi: .
Abstract: Embedded-DRAM (eDRAM) power-energy estimation model is proposed for system-on-a-chip (SOC) applications. The main feature is the signal swing based analytic (SSBA) model, which improves the accuracy of the conventional SRAM power-energy models. The power-energy estimation using SSBA model shows 95% accuracy compared with the transistor level power simulation for three fabricated eDRAMs. The SSBA model combined with the high-level simulator provides fast and accurate system level power-energy estimation of eDRAM.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_8_1664/_p
Salinan
@ARTICLE{e85-c_8_1664,
author={Yong-Ha PARK, Jeonghoon KOOK, Hoi-Jun YOO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Embedded DRAM (eDRAM) Power-Energy Estimation Using Signal Swing-Based Analytical Model},
year={2002},
volume={E85-C},
number={8},
pages={1664-1668},
abstract={Embedded-DRAM (eDRAM) power-energy estimation model is proposed for system-on-a-chip (SOC) applications. The main feature is the signal swing based analytic (SSBA) model, which improves the accuracy of the conventional SRAM power-energy models. The power-energy estimation using SSBA model shows 95% accuracy compared with the transistor level power simulation for three fabricated eDRAMs. The SSBA model combined with the high-level simulator provides fast and accurate system level power-energy estimation of eDRAM.},
keywords={},
doi={},
ISSN={},
month={August},}
Salinan
TY - JOUR
TI - Embedded DRAM (eDRAM) Power-Energy Estimation Using Signal Swing-Based Analytical Model
T2 - IEICE TRANSACTIONS on Electronics
SP - 1664
EP - 1668
AU - Yong-Ha PARK
AU - Jeonghoon KOOK
AU - Hoi-Jun YOO
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2002
AB - Embedded-DRAM (eDRAM) power-energy estimation model is proposed for system-on-a-chip (SOC) applications. The main feature is the signal swing based analytic (SSBA) model, which improves the accuracy of the conventional SRAM power-energy models. The power-energy estimation using SSBA model shows 95% accuracy compared with the transistor level power simulation for three fabricated eDRAMs. The SSBA model combined with the high-level simulator provides fast and accurate system level power-energy estimation of eDRAM.
ER -