The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kertas kerja ini membentangkan penguat transkonduktans operasi dipacu pukal kelas kuasa ultra-rendah-AB yang beroperasi di rantau subambang. Menggunakan maklum balas positif separa dalam cermin semasa, transkonduktans berkesan dan ayunan voltan keluaran dipertingkatkan dengan ketara tanpa penggunaan kuasa dan kawasan susun atur tambahan. Kedua-dua OTA tradisional dan cadangan direka dan disimulasikan untuk proses CMOS 180 nm. Mereka menghilangkan kuasa ultra rendah 192 nW. OTA yang dicadangkan mempunyai bukan sahaja peningkatan keuntungan DC sebanyak 14 dB tetapi juga peningkatan kadar slew sebanyak 200%. Di samping itu, keuntungan yang lebih baik membawa kepada lebar jalur keuntungan perpaduan 5.3 kali lebih luas daripada OTA tradisional.
Seong Jin CHOE
Kyungpook National University
Ju Sang LEE
Kyungpook National University
Sung Sik PARK
Kyungpook National University
Sang Dae YU
Kyungpook National University
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Salinan
Seong Jin CHOE, Ju Sang LEE, Sung Sik PARK, Sang Dae YU, "Ultra-Low-Power Class-AB Bulk-Driven OTA with Enhanced Transconductance" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 5, pp. 420-423, May 2019, doi: 10.1587/transele.2018ECS6002.
Abstract: This paper presents an ultra-low-power class-AB bulk-driven operational transconductance amplifier operating in the subthreshold region. Employing the partial positive feedback in current mirrors, the effective transconductance and output voltage swing are enhanced considerably without additional power consumption and layout area. Both traditional and proposed OTAs are designed and simulated for a 180 nm CMOS process. They dissipate an ultra low power of 192 nW. The proposed OTA features not only a DC gain enhancement of 14 dB but also a slew rate improvement of 200%. In addition, the improved gain leads to a 5.3 times wider unity-gain bandwidth than that of the traditional OTA.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018ECS6002/_p
Salinan
@ARTICLE{e102-c_5_420,
author={Seong Jin CHOE, Ju Sang LEE, Sung Sik PARK, Sang Dae YU, },
journal={IEICE TRANSACTIONS on Electronics},
title={Ultra-Low-Power Class-AB Bulk-Driven OTA with Enhanced Transconductance},
year={2019},
volume={E102-C},
number={5},
pages={420-423},
abstract={This paper presents an ultra-low-power class-AB bulk-driven operational transconductance amplifier operating in the subthreshold region. Employing the partial positive feedback in current mirrors, the effective transconductance and output voltage swing are enhanced considerably without additional power consumption and layout area. Both traditional and proposed OTAs are designed and simulated for a 180 nm CMOS process. They dissipate an ultra low power of 192 nW. The proposed OTA features not only a DC gain enhancement of 14 dB but also a slew rate improvement of 200%. In addition, the improved gain leads to a 5.3 times wider unity-gain bandwidth than that of the traditional OTA.},
keywords={},
doi={10.1587/transele.2018ECS6002},
ISSN={1745-1353},
month={May},}
Salinan
TY - JOUR
TI - Ultra-Low-Power Class-AB Bulk-Driven OTA with Enhanced Transconductance
T2 - IEICE TRANSACTIONS on Electronics
SP - 420
EP - 423
AU - Seong Jin CHOE
AU - Ju Sang LEE
AU - Sung Sik PARK
AU - Sang Dae YU
PY - 2019
DO - 10.1587/transele.2018ECS6002
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2019
AB - This paper presents an ultra-low-power class-AB bulk-driven operational transconductance amplifier operating in the subthreshold region. Employing the partial positive feedback in current mirrors, the effective transconductance and output voltage swing are enhanced considerably without additional power consumption and layout area. Both traditional and proposed OTAs are designed and simulated for a 180 nm CMOS process. They dissipate an ultra low power of 192 nW. The proposed OTA features not only a DC gain enhancement of 14 dB but also a slew rate improvement of 200%. In addition, the improved gain leads to a 5.3 times wider unity-gain bandwidth than that of the traditional OTA.
ER -