The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Untuk mengoptimumkan prestasi peranti termoelektrik, kami telah mereka dan mencirikan termopile Si berskala mikrometer yang memelihara kesan seret fonon, di mana termopile Si terdiri daripada pasangan wayar Si jenis p dan n. Pekali Seebeck yang diukur bagi wayar Si jenis p didapati lebih tinggi daripada nilai teori yang dikira hanya daripada pengangkutan pembawa, yang menunjukkan sumbangan bahagian seret fonon. Selain itu, pekali Seebeck yang diukur meningkat dengan meningkatkan lebar wayar Si. Fakta ini dianggap disebabkan oleh pergantungan bahagian seret fonon pada lebar wayar yang berpunca daripada pengurangan serakan sempadan fonon. Sumbangan ini juga diperhatikan dalam voltan keluaran terukur termopile wayar Si. Oleh itu, voltan keluaran termopile wayar Si dijangka boleh dipertingkatkan dengan menggunakan kesan seret fonon dalam wayar Si dengan mengoptimumkan saiz dan kepekatan pembawanya.
Khotimatul FAUZIAH
Shizuoka University
Yuhei SUZUKI
Shizuoka University
Yuki NARITA
Shizuoka University
Yoshinari KAMAKURA
Osaka University
Takanobu WATANABE
Waseda University
Faiz SALLEH
University of Malaya
Hiroya IKEDA
Shizuoka University
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Salinan
Khotimatul FAUZIAH, Yuhei SUZUKI, Yuki NARITA, Yoshinari KAMAKURA, Takanobu WATANABE, Faiz SALLEH, Hiroya IKEDA, "Effect of Phonon-Drag Contributed Seebeck Coefficient on Si-Wire Thermopile Voltage Output" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 6, pp. 475-478, June 2019, doi: 10.1587/transele.2018FUS0003.
Abstract: In order to optimize the performance of thermoelectric devices, we have fabricated and characterized the micrometer-scaled Si thermopile preserving the phonon-drag effect, where the Si thermopile consists of p- and n-type Si wire pairs. The measured Seebeck coefficient of the p-type Si wire was found to be higher than the theoretical value calculated only from the carrier transport, which indicates the contribution of phonon-drag part. Moreover, the measured Seebeck coefficient increased with increasing the width of Si wire. This fact is considered due to dependency of phonon-drag part on the wire width originating from the reduction of phonon-boundary scattering. These contributions were observed also in measured output voltage of Si-wire thermopile. Hence, the output voltage of Si-wire thermopile is expected can be enhanced by utilizing the phonon-drag effect in Si wire by optimizing its size and carrier concentration.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018FUS0003/_p
Salinan
@ARTICLE{e102-c_6_475,
author={Khotimatul FAUZIAH, Yuhei SUZUKI, Yuki NARITA, Yoshinari KAMAKURA, Takanobu WATANABE, Faiz SALLEH, Hiroya IKEDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effect of Phonon-Drag Contributed Seebeck Coefficient on Si-Wire Thermopile Voltage Output},
year={2019},
volume={E102-C},
number={6},
pages={475-478},
abstract={In order to optimize the performance of thermoelectric devices, we have fabricated and characterized the micrometer-scaled Si thermopile preserving the phonon-drag effect, where the Si thermopile consists of p- and n-type Si wire pairs. The measured Seebeck coefficient of the p-type Si wire was found to be higher than the theoretical value calculated only from the carrier transport, which indicates the contribution of phonon-drag part. Moreover, the measured Seebeck coefficient increased with increasing the width of Si wire. This fact is considered due to dependency of phonon-drag part on the wire width originating from the reduction of phonon-boundary scattering. These contributions were observed also in measured output voltage of Si-wire thermopile. Hence, the output voltage of Si-wire thermopile is expected can be enhanced by utilizing the phonon-drag effect in Si wire by optimizing its size and carrier concentration.},
keywords={},
doi={10.1587/transele.2018FUS0003},
ISSN={1745-1353},
month={June},}
Salinan
TY - JOUR
TI - Effect of Phonon-Drag Contributed Seebeck Coefficient on Si-Wire Thermopile Voltage Output
T2 - IEICE TRANSACTIONS on Electronics
SP - 475
EP - 478
AU - Khotimatul FAUZIAH
AU - Yuhei SUZUKI
AU - Yuki NARITA
AU - Yoshinari KAMAKURA
AU - Takanobu WATANABE
AU - Faiz SALLEH
AU - Hiroya IKEDA
PY - 2019
DO - 10.1587/transele.2018FUS0003
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2019
AB - In order to optimize the performance of thermoelectric devices, we have fabricated and characterized the micrometer-scaled Si thermopile preserving the phonon-drag effect, where the Si thermopile consists of p- and n-type Si wire pairs. The measured Seebeck coefficient of the p-type Si wire was found to be higher than the theoretical value calculated only from the carrier transport, which indicates the contribution of phonon-drag part. Moreover, the measured Seebeck coefficient increased with increasing the width of Si wire. This fact is considered due to dependency of phonon-drag part on the wire width originating from the reduction of phonon-boundary scattering. These contributions were observed also in measured output voltage of Si-wire thermopile. Hence, the output voltage of Si-wire thermopile is expected can be enhanced by utilizing the phonon-drag effect in Si wire by optimizing its size and carrier concentration.
ER -