The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Kami mengarang dan mencirikan diod ke belakang (BWD) GaAsSb/InGaAs ke arah merealisasikan pembetulan gelombang mikro pincang sifar kepekaan tinggi untuk penuaian tenaga gelombang RF. BWD p-GaAsSb/n-InGaAs padanan kekisi telah direka dan voltan semasanya (IV) ciri dan parameter S sehingga 67 GHz diukur berkenaan dengan beberapa jenis diameter mesa dalam susunan μm. Model teori dan analisis kami sesuai dengan yang diukur IVs berdasarkan penghampiran WKB bagi pemancaran. Telah disahkan bahawa terowong antara jalur disebabkan oleh heterojunction adalah mekanisme pengangkutan yang dominan untuk mempamerkan bukan linear. IV sekitar rejim bias sifar tidak seperti komponen arus rekombinasi atau resapan pada persimpangan pn menyumbang dalam rejim arus besar. Model litar setara BWD dijelaskan dengan mengesahkan pemasangan teori untuk kemasukan bergantung kepada frekuensi sehingga 67 GHz. Daripada model litar, menghapuskan komponen induktans parasit, pergantungan frekuensi kepekaan voltan penerus BWD diperolehi berkenaan dengan beberapa saiz diameter mesa. Ia secara kuantitatif mencadangkan keberkesanan pengurangan saiz mesa untuk meningkatkan sensitiviti voltan dipadankan intrinsik dengan peningkatan rintangan simpang dan mengekalkan magnitud IV pekali kelengkungan.
Shinpei YAMASHITA
Tokyo Metropolitan University
Michihiko SUHARA
Tokyo Metropolitan University
Kenichi KAWAGUCHI
Fujitsu Limited,Fujitsu Laboratories Ltd.
Tsuyoshi TAKAHASHI
Fujitsu Limited,Fujitsu Laboratories Ltd.
Masaru SATO
Fujitsu Limited,Fujitsu Laboratories Ltd.
Naoya OKAMOTO
Fujitsu Limited,Fujitsu Laboratories Ltd.
Kiyoto ASAKAWA
Tokyo Metropolitan College of Industrial Technology
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Salinan
Shinpei YAMASHITA, Michihiko SUHARA, Kenichi KAWAGUCHI, Tsuyoshi TAKAHASHI, Masaru SATO, Naoya OKAMOTO, Kiyoto ASAKAWA, "Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz" in IEICE TRANSACTIONS on Electronics,
vol. E102-C, no. 6, pp. 462-465, June 2019, doi: 10.1587/transele.2018FUS0006.
Abstract: We fabricate and characterize a GaAsSb/InGaAs backward diode (BWD) toward a realization of high sensitivity zero bias microwave rectification for RF wave energy harvest. Lattice-matched p-GaAsSb/n-InGaAs BWDs were fabricated and their current-voltage (I-V) characteristics and S-parameters up to 67 GHz were measured with respect to several sorts of mesa diameters in μm order. Our theoretical model and analysis are well fitted to the measured I-Vs on the basis of WKB approximation of the transmittance. It is confirmed that the interband tunneling due to the heterojunction is a dominant transport mechanism to exhibit the nonlinear I-V around zero bias regime unlike recombination or diffusion current components on p-n junction contribute in large current regime. An equivalent circuit model of the BWD is clarified by confirming theoretical fitting for frequency dependent admittance up to 67 GHz. From the circuit model, eliminating the parasitic inductance component, the frequency dependence of voltage sensitivity of the BWD rectifier is derived with respect to several size of mesa diameter. It quantitatively suggests an effectiveness of mesa size reduction to enhance the intrinsic matched voltage sensitivity with increasing junction resistance and keeping the magnitude of I-V curvature coefficient.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2018FUS0006/_p
Salinan
@ARTICLE{e102-c_6_462,
author={Shinpei YAMASHITA, Michihiko SUHARA, Kenichi KAWAGUCHI, Tsuyoshi TAKAHASHI, Masaru SATO, Naoya OKAMOTO, Kiyoto ASAKAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz},
year={2019},
volume={E102-C},
number={6},
pages={462-465},
abstract={We fabricate and characterize a GaAsSb/InGaAs backward diode (BWD) toward a realization of high sensitivity zero bias microwave rectification for RF wave energy harvest. Lattice-matched p-GaAsSb/n-InGaAs BWDs were fabricated and their current-voltage (I-V) characteristics and S-parameters up to 67 GHz were measured with respect to several sorts of mesa diameters in μm order. Our theoretical model and analysis are well fitted to the measured I-Vs on the basis of WKB approximation of the transmittance. It is confirmed that the interband tunneling due to the heterojunction is a dominant transport mechanism to exhibit the nonlinear I-V around zero bias regime unlike recombination or diffusion current components on p-n junction contribute in large current regime. An equivalent circuit model of the BWD is clarified by confirming theoretical fitting for frequency dependent admittance up to 67 GHz. From the circuit model, eliminating the parasitic inductance component, the frequency dependence of voltage sensitivity of the BWD rectifier is derived with respect to several size of mesa diameter. It quantitatively suggests an effectiveness of mesa size reduction to enhance the intrinsic matched voltage sensitivity with increasing junction resistance and keeping the magnitude of I-V curvature coefficient.},
keywords={},
doi={10.1587/transele.2018FUS0006},
ISSN={1745-1353},
month={June},}
Salinan
TY - JOUR
TI - Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz
T2 - IEICE TRANSACTIONS on Electronics
SP - 462
EP - 465
AU - Shinpei YAMASHITA
AU - Michihiko SUHARA
AU - Kenichi KAWAGUCHI
AU - Tsuyoshi TAKAHASHI
AU - Masaru SATO
AU - Naoya OKAMOTO
AU - Kiyoto ASAKAWA
PY - 2019
DO - 10.1587/transele.2018FUS0006
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E102-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2019
AB - We fabricate and characterize a GaAsSb/InGaAs backward diode (BWD) toward a realization of high sensitivity zero bias microwave rectification for RF wave energy harvest. Lattice-matched p-GaAsSb/n-InGaAs BWDs were fabricated and their current-voltage (I-V) characteristics and S-parameters up to 67 GHz were measured with respect to several sorts of mesa diameters in μm order. Our theoretical model and analysis are well fitted to the measured I-Vs on the basis of WKB approximation of the transmittance. It is confirmed that the interband tunneling due to the heterojunction is a dominant transport mechanism to exhibit the nonlinear I-V around zero bias regime unlike recombination or diffusion current components on p-n junction contribute in large current regime. An equivalent circuit model of the BWD is clarified by confirming theoretical fitting for frequency dependent admittance up to 67 GHz. From the circuit model, eliminating the parasitic inductance component, the frequency dependence of voltage sensitivity of the BWD rectifier is derived with respect to several size of mesa diameter. It quantitatively suggests an effectiveness of mesa size reduction to enhance the intrinsic matched voltage sensitivity with increasing junction resistance and keeping the magnitude of I-V curvature coefficient.
ER -