The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Pendekatan reka bentuk baharu bagi penguat kuasa RF jalur lebar (PA) diperkenalkan dalam kerja ini dengan gabungan parameter X isyarat besar dan Teknik Frekuensi Sebenar (RFT). Analisis teori bagi parameter X isyarat besar dikaji semula, dan kaedah penyederhanaan diperkenalkan untuk menentukan galangan isyarat besar yang optimum bagi peranti Gallium Nitride HEMT (GaN HEMT). Dengan pengekstrakan impedans optimum pada julat frekuensi yang luas (0.3 hingga 2.0 GHz), rangkaian padanan jalur lebar dibina menggunakan RFT dan reka bentuk akhir dilaksanakan dengan elemen bercampur-campur yang praktikal. Prototaip jalur lebar RF PA menunjukkan kuasa output 40 dBm. Purata kecekapan saliran PA didapati melebihi 60%; sambil mempamerkan prestasi perolehan rata yang boleh diterima (12±0.25 dB) ke atas jalur frekuensi (0.3-2.0 GHz). PA yang direka menggunakan pendekatan yang dicadangkan menghasilkan dalam faktor bentuk yang kecil dan kos pengeluaran yang agak rendah berbanding PA yang serupa yang direka bentuk dengan kaedah klasik. Adalah dijangka bahawa kaedah reka bentuk yang baru dicadangkan akan digunakan untuk membina penguat kuasa untuk aplikasi komunikasi radio.
Ragavan KRISHNAMOORTHY
University of Malaya
Narendra KUMAR
University of Malaya
Andrei GREBENNIKOV
Sumitomo Electric Europe Ltd.
Binboga Siddik YARMAN
Istanbul University
Harikrishnan RAMIAH
University of Malaya
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Salinan
Ragavan KRISHNAMOORTHY, Narendra KUMAR, Andrei GREBENNIKOV, Binboga Siddik YARMAN, Harikrishnan RAMIAH, "Broadband RF Power Amplifier with Combination of Large Signal X-Parameter and Real Frequency Techniques" in IEICE TRANSACTIONS on Electronics,
vol. E103-C, no. 5, pp. 225-230, May 2020, doi: 10.1587/transele.2019ECP5036.
Abstract: A new design approach of broadband RF power amplifier (PA) is introduced in this work with combination of large signal X-parameter and Real-Frequency Technique (RFT). A theoretical analysis of large signal X-parameter is revisited, and a simplification method is introduced to determine the optimum large signal impedances of a Gallium Nitride HEMT (GaN HEMT) device. With the optimum impedance extraction over the wide frequency range (0.3 to 2.0 GHz), a wideband matching network is constructed employing RFT and the final design is implemented with practical mixed-lumped elements. The prototype broadband RF PA demonstrates an output power of 40 dBm. The average drain efficiency of the PA is found to be more than 60%; while exhibiting acceptable flat gain performance (12±0.25 dB) over the frequency band of (0.3-2.0 GHz). The PA designed using the proposed approach yields in small form factor and relatively lower production cost over those of similar PAs designed with the classical methods. It is expected that the newly proposed design method will be utilized to construct power amplifiers for radio communications applications.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2019ECP5036/_p
Salinan
@ARTICLE{e103-c_5_225,
author={Ragavan KRISHNAMOORTHY, Narendra KUMAR, Andrei GREBENNIKOV, Binboga Siddik YARMAN, Harikrishnan RAMIAH, },
journal={IEICE TRANSACTIONS on Electronics},
title={Broadband RF Power Amplifier with Combination of Large Signal X-Parameter and Real Frequency Techniques},
year={2020},
volume={E103-C},
number={5},
pages={225-230},
abstract={A new design approach of broadband RF power amplifier (PA) is introduced in this work with combination of large signal X-parameter and Real-Frequency Technique (RFT). A theoretical analysis of large signal X-parameter is revisited, and a simplification method is introduced to determine the optimum large signal impedances of a Gallium Nitride HEMT (GaN HEMT) device. With the optimum impedance extraction over the wide frequency range (0.3 to 2.0 GHz), a wideband matching network is constructed employing RFT and the final design is implemented with practical mixed-lumped elements. The prototype broadband RF PA demonstrates an output power of 40 dBm. The average drain efficiency of the PA is found to be more than 60%; while exhibiting acceptable flat gain performance (12±0.25 dB) over the frequency band of (0.3-2.0 GHz). The PA designed using the proposed approach yields in small form factor and relatively lower production cost over those of similar PAs designed with the classical methods. It is expected that the newly proposed design method will be utilized to construct power amplifiers for radio communications applications.},
keywords={},
doi={10.1587/transele.2019ECP5036},
ISSN={1745-1353},
month={May},}
Salinan
TY - JOUR
TI - Broadband RF Power Amplifier with Combination of Large Signal X-Parameter and Real Frequency Techniques
T2 - IEICE TRANSACTIONS on Electronics
SP - 225
EP - 230
AU - Ragavan KRISHNAMOORTHY
AU - Narendra KUMAR
AU - Andrei GREBENNIKOV
AU - Binboga Siddik YARMAN
AU - Harikrishnan RAMIAH
PY - 2020
DO - 10.1587/transele.2019ECP5036
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E103-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2020
AB - A new design approach of broadband RF power amplifier (PA) is introduced in this work with combination of large signal X-parameter and Real-Frequency Technique (RFT). A theoretical analysis of large signal X-parameter is revisited, and a simplification method is introduced to determine the optimum large signal impedances of a Gallium Nitride HEMT (GaN HEMT) device. With the optimum impedance extraction over the wide frequency range (0.3 to 2.0 GHz), a wideband matching network is constructed employing RFT and the final design is implemented with practical mixed-lumped elements. The prototype broadband RF PA demonstrates an output power of 40 dBm. The average drain efficiency of the PA is found to be more than 60%; while exhibiting acceptable flat gain performance (12±0.25 dB) over the frequency band of (0.3-2.0 GHz). The PA designed using the proposed approach yields in small form factor and relatively lower production cost over those of similar PAs designed with the classical methods. It is expected that the newly proposed design method will be utilized to construct power amplifiers for radio communications applications.
ER -