The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Dalam makalah ini, kesan lapisan pengekapan TiN dan proses pengasingan dopan pada sifat antara muka dan pengurangan ketinggian halangan Schottky PdEr-silicid/n-Si(100) telah disiasat. Keputusan menunjukkan bahawa mengawal lokasi awal dopan boron dengan menambahkan lapisan pengekapan TiN menurunkan ketinggian halangan Schottky (SBH) untuk lubang kepada 0.20 eV. Tambahan pula, ketumpatan keadaan antara muka (Dit) mengikut urutan 1011eV-1cm-2 diperoleh menunjukkan bahawa proses pengasingan dopan dengan lapisan pengekapan TiN secara berkesan memusnahkan keadaan antara muka.
Rengie Mark D. MAILIG
Tokyo Institute of Technology
Min Gee KIM
Tokyo Institute of Technology
Shun-ichiro OHMI
Tokyo Institute of Technology
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Salinan
Rengie Mark D. MAILIG, Min Gee KIM, Shun-ichiro OHMI, "The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process" in IEICE TRANSACTIONS on Electronics,
vol. E103-C, no. 6, pp. 286-292, June 2020, doi: 10.1587/transele.2019FUP0006.
Abstract: In this paper, the effects of the TiN encapsulating layer and the dopant segregation process on the interface properties and the Schottky barrier height reduction of PdEr-silicide/n-Si(100) were investigated. The results show that controlling the initial location of the boron dopants by adding the TiN encapsulating layer lowered the Schottky barrier height (SBH) for hole to 0.20 eV. Furthermore, the density of interface states (Dit) on the order of 1011eV-1cm-2 was obtained indicating that the dopant segregation process with TiN encapsulating layer effectively annihilated the interface states.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2019FUP0006/_p
Salinan
@ARTICLE{e103-c_6_286,
author={Rengie Mark D. MAILIG, Min Gee KIM, Shun-ichiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process},
year={2020},
volume={E103-C},
number={6},
pages={286-292},
abstract={In this paper, the effects of the TiN encapsulating layer and the dopant segregation process on the interface properties and the Schottky barrier height reduction of PdEr-silicide/n-Si(100) were investigated. The results show that controlling the initial location of the boron dopants by adding the TiN encapsulating layer lowered the Schottky barrier height (SBH) for hole to 0.20 eV. Furthermore, the density of interface states (Dit) on the order of 1011eV-1cm-2 was obtained indicating that the dopant segregation process with TiN encapsulating layer effectively annihilated the interface states.},
keywords={},
doi={10.1587/transele.2019FUP0006},
ISSN={1745-1353},
month={June},}
Salinan
TY - JOUR
TI - The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process
T2 - IEICE TRANSACTIONS on Electronics
SP - 286
EP - 292
AU - Rengie Mark D. MAILIG
AU - Min Gee KIM
AU - Shun-ichiro OHMI
PY - 2020
DO - 10.1587/transele.2019FUP0006
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E103-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2020
AB - In this paper, the effects of the TiN encapsulating layer and the dopant segregation process on the interface properties and the Schottky barrier height reduction of PdEr-silicide/n-Si(100) were investigated. The results show that controlling the initial location of the boron dopants by adding the TiN encapsulating layer lowered the Schottky barrier height (SBH) for hole to 0.20 eV. Furthermore, the density of interface states (Dit) on the order of 1011eV-1cm-2 was obtained indicating that the dopant segregation process with TiN encapsulating layer effectively annihilated the interface states.
ER -