The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Dalam kajian ini, simulasi dilakukan untuk mereka bentuk peranti optimum untuk menipis lapisan saluran GaN pada lapisan separa penebat di HEMT. Apabila panjang get ialah 50nm, ketebalan saluran tidak didop mestilah lebih nipis daripada 300nm untuk melihat keadaan off. Apabila lapisan saluran GaN adalah Fe-doped, nisbah hidup/mati ~300 boleh dicapai walaupun dengan panjang get 25nm, walaupun transkonduktansi berkurangan sedikit.
Yasuyuki MIYAMOTO
Tokyo Institute of Technology,Nagoya University
Takahiro GOTOW
Tokyo Institute of Technology
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Salinan
Yasuyuki MIYAMOTO, Takahiro GOTOW, "Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer" in IEICE TRANSACTIONS on Electronics,
vol. E103-C, no. 6, pp. 304-307, June 2020, doi: 10.1587/transele.2019FUS0002.
Abstract: In this study, simulations are performed to design an optimal device for thinning the GaN channel layer on the semi-insulating layer in HEMT. When the gate length is 50nm, the thickness of the undoped channel must be thinner than 300nm to observe the off state. When the GaN channel layer is an Fe-doped, an on/off ratio of ~300 can be achieved even with a gate length of 25nm, although the transconductance is slightly reduced.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2019FUS0002/_p
Salinan
@ARTICLE{e103-c_6_304,
author={Yasuyuki MIYAMOTO, Takahiro GOTOW, },
journal={IEICE TRANSACTIONS on Electronics},
title={Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer},
year={2020},
volume={E103-C},
number={6},
pages={304-307},
abstract={In this study, simulations are performed to design an optimal device for thinning the GaN channel layer on the semi-insulating layer in HEMT. When the gate length is 50nm, the thickness of the undoped channel must be thinner than 300nm to observe the off state. When the GaN channel layer is an Fe-doped, an on/off ratio of ~300 can be achieved even with a gate length of 25nm, although the transconductance is slightly reduced.},
keywords={},
doi={10.1587/transele.2019FUS0002},
ISSN={1745-1353},
month={June},}
Salinan
TY - JOUR
TI - Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 304
EP - 307
AU - Yasuyuki MIYAMOTO
AU - Takahiro GOTOW
PY - 2020
DO - 10.1587/transele.2019FUS0002
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E103-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2020
AB - In this study, simulations are performed to design an optimal device for thinning the GaN channel layer on the semi-insulating layer in HEMT. When the gate length is 50nm, the thickness of the undoped channel must be thinner than 300nm to observe the off state. When the GaN channel layer is an Fe-doped, an on/off ratio of ~300 can be achieved even with a gate length of 25nm, although the transconductance is slightly reduced.
ER -